Memristive Ion Dynamics to Enable Biorealistic Computing
Conventional artificial intelligence (AI) systems are facing bottlenecks due to the
fundamental mismatches between AI models, which rely on parallel, in-memory, and …
fundamental mismatches between AI models, which rely on parallel, in-memory, and …
Multilevel Conductance States of Vapor‐Transport‐Deposited Sb2S3 Memristors Achieved via Electrical and Optical Modulation
The pursuit of advanced brain‐inspired electronic devices and memory technologies has led
to explore novel materials by processing multimodal and multilevel tailored conductive …
to explore novel materials by processing multimodal and multilevel tailored conductive …
Memristive Monte Carlo DropConnect crossbar array enabled by device and algorithm co-design
Device and algorithm co-design aims to develop energy-efficient hardware that directly
implements complex algorithms and optimizes algorithms to match the hardware's …
implements complex algorithms and optimizes algorithms to match the hardware's …
Oxygen ion migration induced polarity switchable SrFeOx memristor for high-precision handwriting recognition
R Su, R Xiao, C Shen, D Song, J Chen, B Zhou… - Applied Surface …, 2023 - Elsevier
This paper reports a repeatable polarity reversal behavior in Au/SrFeO x (SFO)/SrRuO 3
(SRO) memristor. The set and reset voltage direction can be inverted by applying a suitable …
(SRO) memristor. The set and reset voltage direction can be inverted by applying a suitable …
Unveiling the Resistive Switching Mechanism and Low Current Dynamics of Ru‐based Hybrid Synaptic Memristors
DS Woo, SM Jin, JK Kim, GH Park… - Advanced Functional …, 2024 - Wiley Online Library
Mobile Ru ions in oxide media have been reported as a novel species that offer extremely
low switching currents for memristors. However, their bi‐stable resistive‐switching (RS) and …
low switching currents for memristors. However, their bi‐stable resistive‐switching (RS) and …
Multiphase Reset Induced Reliable Dual-Mode Resistance Switching of the Ta/HfO2/RuO2 Memristor
Higher functionality should be achieved within the device-level switching characteristics to
secure the operational possibility of mixed-signal data processing within a memristive …
secure the operational possibility of mixed-signal data processing within a memristive …
Effects of thermal annealing on analog resistive switching behavior in bilayer HfO 2/ZnO synaptic devices: the role of ZnO grain boundaries
YJ An, H Yan, C Yeom, J Jeong, SB Eadi, HD Lee… - Nanoscale, 2024 - pubs.rsc.org
The effects of thermal annealing on analog resistive switching behavior in bilayer HfO2/ZnO
synaptic devices were investigated. The annealed active ZnO layer between the top Pd …
synaptic devices were investigated. The annealed active ZnO layer between the top Pd …