Lattice modulation strategies for 2D material assisted epitaxial growth
Q Chen, K Yang, M Liang, J Kang, X Yi, J Wang, J Li… - Nano …, 2023 - Springer
As an emerging single crystals growth technique, the 2D-material-assisted epitaxy shows
excellent advantages in flexible and transferable structure fabrication, dissimilar materials …
excellent advantages in flexible and transferable structure fabrication, dissimilar materials …
III-nitride semiconductor membrane electronics and optoelectronics for heterogeneous integration
R Chen, Y Song, R He, J Wang, J Li, T Wei - Progress in Quantum …, 2024 - Elsevier
The rapidly developing III-nitrides materials and devices technologies are driving the
advancements in hybrid heterogeneous structures for multi-material and multifunctional …
advancements in hybrid heterogeneous structures for multi-material and multifunctional …
2D-Material-Assisted GaN Growth on GaN Template by MOCVD and Its Exfoliation Strategy
The production of freestanding membranes using two-dimensional (2D) materials often
involves techniques such as van der Waals (vdW) epitaxy, quasi-vdW epitaxy, and remote …
involves techniques such as van der Waals (vdW) epitaxy, quasi-vdW epitaxy, and remote …
Impact of graphene state on the orientation of III–nitride
JH Park, N Hu, MD Park, J Wang, X Yang… - Applied Physics …, 2023 - pubs.aip.org
ABSTRACT We attempted to grow (10–13) semi-polar GaN on graphene to confirm the
possibility of a remote epitaxy of semi-polar GaN. Single crystalline (10–13) GaN was …
possibility of a remote epitaxy of semi-polar GaN. Single crystalline (10–13) GaN was …
Semiconductor Membrane Exfoliation: Technology and Application
Flexible semiconductor film‐based optoelectronic devices have garnered significant
attention in emerging fields such as the Internet of Things (IoT), wearable devices, and smart …
attention in emerging fields such as the Internet of Things (IoT), wearable devices, and smart …
Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces
S Mao, T Gao, L Li, Y Gao, Z Zhang… - Crystal Growth & …, 2024 - ACS Publications
Gallium nitride (GaN) is frequently used as the primary material for manufacturing high-
brightness light-emitting diodes (LEDs). Recently, atomic layer deposition has become …
brightness light-emitting diodes (LEDs). Recently, atomic layer deposition has become …