Gallium oxide nanostructures: A review of synthesis, properties and applications

NS Jamwal, A Kiani - Nanomaterials, 2022 - mdpi.com
Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among
researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 …

Recent progress of Ga2O3-based gas sensors

H Zhai, Z Wu, Z Fang - Ceramics International, 2022 - Elsevier
In recent years, gas sensors fabricated from gallium oxide (Ga 2 O 3) materials have
aroused intense research interest due to the superior material properties of large dielectric …

Gallium oxide for gas sensor applications: A comprehensive review

J Zhu, Z Xu, S Ha, D Li, K Zhang, H Zhang, J Feng - Materials, 2022 - mdpi.com
Ga2O3 has emerged as a promising ultrawide bandgap semiconductor for numerous device
applications owing to its excellent material properties. In this paper, we present a …

State-of-the-Art β-Ga2O3 Field-Effect Transistors for Power Electronics

AC Liu, CH Hsieh, C Langpoklakpam, KJ Singh… - ACS …, 2022 - ACS Publications
Due to the emergence of electric vehicles, power electronics have become the new focal
point of research. Compared to commercialized semiconductors, such as Si, GaN, and SiC …

VLS growth of pure and Au decorated β-Ga2O3 nanowires for room temperature CO gas sensor and resistive memory applications

TF Weng, MS Ho, C Sivakumar, B Balraj… - Applied Surface …, 2020 - Elsevier
High-density single crystalline β-Ga 2 O 3 nanowires on silicon (1 0 0) substrates were
grown by vapour-liquid-solid growth method. We have characterized the pure β-Ga 2 O 3 …

Multimodal Gas Sensor Detecting Hydroxyl Groups with Phase Transition Based on Eco‐Friendly Lead‐Free Metal Halides

D Lee, SJ Lee, JH Kim, J Park, YC Kang… - Advanced Functional …, 2022 - Wiley Online Library
An electrical and optical responsive chemical‐semiconductor gas sensor is developed using
Cu (I) halides with a phase transition mechanism. Cu (I) materials exhibit reversible phase …

Novel SnO2-coated β-Ga2O3 nanostructures for room temperature hydrogen gas sensor

QN Abdullah, AR Ahmed, AM Ali, FK Yam… - International Journal of …, 2021 - Elsevier
Nanostructured β-Ga 2 O 3 nanobelts are fabricated by thermal evaporation method at a
temperature around of 1120° C. Subsequently, a sol-gel processed SnO 2 layer is employed …

New Generation Beta‐Gallium Oxide Nanomaterials: Growth and Performances in Electronic Devices

J Hu, B Yu, J Zhou - Advanced Engineering Materials, 2023 - Wiley Online Library
In the last decade, beta‐gallium oxide (β‐Ga2O3) has been the subject of extensive
research and has rapidly developed as a material for ultra‐wide bandgap semiconductors …

[HTML][HTML] Compositions and properties of high-conductivity nitrogen-doped p-type β-Ga2O3 films prepared by the thermal oxidation of GaN in N2O ambient

Y Liu, S Wei, C Shan, M Zhao, SY Lien… - Journal of Materials …, 2022 - Elsevier
A remarkable improvement in the conductivity of grown nitrogen-doped p-type β-Ga 2 O 3
films was successfully achieved via the thermal oxidation of GaN in N 2 O ambient at 1100° …

Recent developments in zinc-based two-cation oxide spinels: From synthesis to applications

NA Masmali, Z Osman, AK Arof - Ceramics International, 2021 - Elsevier
Abstract Zinc stannate (Zn 2 SnO 4), zinc ferrite (ZnFe 2 O 4), zinc antimonate (ZnSb 2 O 4)
and zinc aluminate (ZnAl 2 O 4) are examples of zinc-based two-cation oxide spinel …