Origin of light instability in amorphous IGZO thin-film transistors and its suppression
Abstract Radiating amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs) with deep
ultraviolet light (λ= 175 nm) is found to induce rigid negative threshold-voltage shift, as well …
ultraviolet light (λ= 175 nm) is found to induce rigid negative threshold-voltage shift, as well …
Trap states extraction of p-channel SnO thin-film transistors based on percolation and multiple trapping carrier conductions
A new method is proposed to extract the trap states in p-channel SnO thin-film transistors
(TFTs). In this method, the dominant conduction mechanisms under different temperatures …
(TFTs). In this method, the dominant conduction mechanisms under different temperatures …
Introducing effective temperature into Arrhenius equation with Meyer-Neldel rule for describing both Arrhenius and non-Arrhenius dependent drain current of …
The drain current of the amorphous InGaZnO thin-film transistors (TFTs) shows the Arrhenius
and the non-Arrhenius dependence at the high temperature and the low temperature …
and the non-Arrhenius dependence at the high temperature and the low temperature …
Adaptation and comparative analysis of HSPICE level‐61 and level‐62 model for a‐IGZO thin film transistors
This paper presents a Computer‐aided design (CAD) model for a‐IGZO thin film transistors
(TFTs) by adapting SPICE level‐61 RPI a‐Si: H (Hydrogenated Amorphous Silicon) TFT …
(TFTs) by adapting SPICE level‐61 RPI a‐Si: H (Hydrogenated Amorphous Silicon) TFT …
Influence of NF3 Plasma-Treated HfO2 Gate Insulator Surface on Tin Oxide Thin-Film Transistors
C Avis, J Jang - Materials, 2023 - mdpi.com
We studied the impact of NF3 plasma treatment on the HfO2 gate insulator of amorphous tin
oxide (a-SnOx) thin-film transistors (TFTs). The plasma treatment was for 0, 10, or 30 s. The …
oxide (a-SnOx) thin-film transistors (TFTs). The plasma treatment was for 0, 10, or 30 s. The …
Timescales: the choreography of classical and unconventional computing
H Jaeger, F Catthoor - arXiv preprint arXiv:2301.00893, 2023 - arxiv.org
Tasks that one wishes to have done by a computer often come with conditions that relate to
timescales. For instance, the processing must terminate within a given time limit; or a signal …
timescales. For instance, the processing must terminate within a given time limit; or a signal …
Light Effect on Amorphous Tin Oxide Thin‐Film Transistors
Amorphous tin oxide (a‐SnOx) is a potential transparent oxide semiconductor candidate for
future large‐area electronic applications. The thin‐film transistor (TFT) mobilities reach≈ …
future large‐area electronic applications. The thin‐film transistor (TFT) mobilities reach≈ …
A Multiple-trapping-and-release transport based threshold voltage model for oxide thin film transistors
This article proposes a generic approach for modelling threshold voltage of oxide thin film
transistors (TFTs). Threshold voltage has always been ambiguous in TFTs due to the …
transistors (TFTs). Threshold voltage has always been ambiguous in TFTs due to the …
Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress
D Hong, B Zhang, D Zhang, M Wang… - IEEE Journal of the …, 2024 - ieeexplore.ieee.org
Degradation phenomena featured with positive shift of the on-state transfer curve are
reported for the amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) under negative …
reported for the amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) under negative …
Characteristics assessment of TFT through 2D simulation under different material and structural configurations
This paper presents a performance analysis of indium-gallium-zinc-oxide (IGZO)-and
pentacene-based top-gate-top-contact (TGTC) and bottom-gate-top-contact (BGTC) thin film …
pentacene-based top-gate-top-contact (TGTC) and bottom-gate-top-contact (BGTC) thin film …