β-Ga2O3-Based Power Devices: A Concise Review
Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …
generation wide bandgap semiconductor, owing to its natural physical and chemical …
Critical review of Ohmic and Schottky contacts to β-Ga2O3
LAM Lyle - Journal of Vacuum Science & Technology A, 2022 - pubs.aip.org
Over the last decade, beta-phase gallium oxide (β-Ga2O3) has developed an extensive
interest for applications such as high-power electronics. Due to its ultrawide bandgap of∼ …
interest for applications such as high-power electronics. Due to its ultrawide bandgap of∼ …
[HTML][HTML] β-Ga2O3 double gate junctionless FET with an efficient volume depletion region
This paper presents a new β-Ga 2 O 3 Junctionless double gate Metal-Oxide-Field-
Semiconductor-Effect-Transistor (βDG-JL-FET) with an embedded P+ packet at the oxide …
Semiconductor-Effect-Transistor (βDG-JL-FET) with an embedded P+ packet at the oxide …
Scattering mechanisms in β-Ga2O3 junctionless SOI MOSFET: investigation of electron mobility and short channel effects
In this work, we investigate the β-Ga 2 O 3 Junctionless SOI MOSFET (β-JLSM) by an
inserted P-layer in the buried oxide (BOX) region (IPB β-JLSM). We focused on the electron …
inserted P-layer in the buried oxide (BOX) region (IPB β-JLSM). We focused on the electron …
Physical analysis of β-Ga2O3 gate-all-around nanowire junctionless transistors: short-channel effects and temperature dependence
In this study, we analyze a β-Ga2O3 gate-all-around nanowire junctionless transistor (β-GAA-
JLT) in accumulation mode. The performances are investigated by considering quantum …
JLT) in accumulation mode. The performances are investigated by considering quantum …
Investigation of tied double gate 4H–SiC junctionless FET in 7 nm channel length with a symmetrical dual p+ layer
In this work, we present a novel ultra-thin 4H–SiC junctionless tied double gate field effect
(DG-JLFET) transistors with a symmetrical dual p+ layer (SDP DG-JLFET) and the proposed …
(DG-JLFET) transistors with a symmetrical dual p+ layer (SDP DG-JLFET) and the proposed …
Investigation of junctionless fin-FET characterization in deep cryogenic temperature: DC and RF analysis
D Madadi - IEEE Access, 2022 - ieeexplore.ieee.org
This work presents the SOI Junctionless Fin-FET characterization in Deep Cryogenic
behavior (DC-JLFET). Results show that the JLT device is well-suited for various operations …
behavior (DC-JLFET). Results show that the JLT device is well-suited for various operations …
β-Ga2O3 Junctionless FET with an Ω Shape 4H-SiC Region in Accumulation Mode
D Madadi - Silicon, 2022 - Springer
In this paper, we present a solution for understanding volume depletion and essentially
decreasing the leakage current of β-Ga 2 O 3 junctionless FETs (βJL-FETs) by embedding …
decreasing the leakage current of β-Ga 2 O 3 junctionless FETs (βJL-FETs) by embedding …
A β-Ga₂O₃ MESFET to Amend the Carrier Distribution by Using a Tunnel Diode
In this article, a new metal-semiconductor field-effect transistor (MESFET) is introduced by
amending the carrier distribution in the active regions of the device for radio frequency …
amending the carrier distribution in the active regions of the device for radio frequency …
Impact of Deep Cryogenic Temperatures on High-k Stacked Dual Gate Junctionless MOSFET Performance: Analog and RF analysis
R Ghosh, RP Nelapati - Silicon, 2024 - Springer
This article presents the reliability analysis of a High-k stacked Dual Gate Junction-less
MOSFET at Deep Cryogenic Temperatures (as low as 50 Kelvin) in terms of dc, analog and …
MOSFET at Deep Cryogenic Temperatures (as low as 50 Kelvin) in terms of dc, analog and …