The spin-dependent photogalvanic (PG) effect in low-dimensional spin semiconductors has
attracted great interest recently. Here, we have studied the spin semiconducting feature and …

This paper evaluates the potential of spin-transfer torque magnetic random-access
memories (STT-MRAMs) operating at cryogenic temperatures. Our study was carried out at …

Magnetic sensors are key elements in many industrial, security, military, and biomedical
applications. Heusler alloys are promising materials for magnetic sensor applications due to …

In New Space, the need for reduced cost, higher performance, and more prompt delivery
plans in radiation-harsh environments have motivated spacecraft designers to use …

Beyond-edge devices can operate outside the reach of the power grid and without batteries.
Such devices can be deployed in large numbers in regions that are difficult to access. Using …

We evaluate the resilience of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with
perpendicular magnetic anisotropy (PMA) to displacement damage induced by heavy-ion …

The rapid transistor scaling and threshold voltage reduction pose several challenges such
as high leakage current and reliability issues. These challenges also make VLSI circuits …

Spin–orbit torque magnetic tunnel junction (SOT-MTJ) is the memory cell of magnetic
random access memory (MRAM), which is a promising candidate for upper level cache in …

Magnetic tunnel junction (MTJ) with magnesium oxide (MgO) tunnel barrier is the core
element of spin transfer torque-based magnetic random access memory. For the application …

Asymmetric charge transport at the interface of two materials with dissimilar electrical
properties, such as metal-semiconductor and pn junctions, is the fundamental feature …