The various surface texturing effects of InGaN light emitting diodes (LEDs) have been
investigated by comparison of experimented data and simulated data. The single-layer and …

High-performance GaN-based green and yellow light-emitting diodes (LEDs) are grown on
\rmSiO_2 nanorod patterned GaN/Si templates by metalorganic chemical vapor deposition …

We propose a simple technique to improve the light extraction efficiency of GaN-based light
emitting diodes (LEDs) by using nanoscale ITO/ZnO layer-texturing. The surface texturing of …

This paper reports on the effect of Ni particle structures on the light extraction in 600 nm
AlGaInP light-emitting diodes (LEDs). A Ni film was deposited on top of a gallium phosphide …

Three types of textured indium-tin-oxide (ITO) surface, including nano-texturing and hybrid
micro/nano-texturing with micro-holes (concave-hybrid-pattern) or micro-pillars (convex …

By inductively coupled plasma (ICP) etching, a selective high barrier region (SHBR) was
fabricated below the p-pad metal electrode for modifying the injection current distribution on …

The light output power of light emitting diodes (LEDs) has been enhanced using
nanoroughed hemispherical indium tin oxide (ITO) transparent ohmic contacts. The …

We report on the effect of embedded silica nanospheres on improving the performance of
InGaN/GaN light-emitting diodes (LEDs). The silica nanospehres were coated on the …

We describe the fabrication and characterization of a randomly etched gallium nitride (GaN)
surface for enhancing light extraction from light-emitting diodes. Our technique uses silica …

A facile and scalable method for enhancing the light trapping effect of indium tin oxide films
on photovoltaic devices is demonstrated. The Langmiur Blodgett technique is introduced to …