A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing
defining a process chamber, a workpiece support configured to support a workpiece within …

A method and apparatus for providing flow into a processing chamber are provided. In one
embodiment, a vacuum processing chamber is provided that includes a substrate support …

A plasma etch reactor for plasma enhanced etching of a workpiece such as a semiconductor
wafer includes a housing defining a process chamber, a workpiece support configured to …

The present invention includes a process for selectively etching a low-k dielectric material
formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas …

An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma
reactor has a bottom Surface facing a processing Zone of the reactor. The elec trode …

(57) ABSTRACT A gas distribution ceiling electrode for use as a capacitive Source power
applicator and gas distribution showerhead in a plasma reactor includes a metal base and a …

Slow filter 104 power generator to a load. A Subsequently measured value of the parameter
that exceeds the computed dynamic boundary of the parameter indicates detection of an arc …

(57) ABSTRACT A plasma reactor for processing a semiconductor workpiece, includes a
reactor chamber having a chamber wall and containing a workpiece Support for holding the …

(57) ABSTRACT A system and method for managing power delivered to a processing
chamber is described. In one embodiment current is drawn away from the plasma …

A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a
vacuum chamber, and a workpiece support within the chamber and facing the ceiling for …