There is currently much activity toward the integration of mid-infrared semiconductor lasers
on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics …

Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …

Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …

The formation and propagation of anti‐phase boundaries (APBs) in the epitaxial growth of III‐
V semiconductors on Silicon is still the subject of great debate, despite the impressive …

Epitaxial growth of III–V materials on a CMOS-compatible Si (001) substrate enables the
feasibility of mass production of low-cost and high-yield Si-based III–V optoelectronic …

This work reports on the precise control of III‐V semiconductors' antiphase domain formation
and evolution during the epitaxial growth on an “on‐axis” Si (001) substrate with a very low …

<? TeX-2pc-0pc?> III-V semiconductor lasers integrated on Si-based photonic platforms are
eagerly awaited by the industry for mass-scale applications, from interconnect to on-chip …

The enhancement of the reliability of the silicon-based III–V quantum well lasers, especially
of those on an on-axis Si (001) substrate, is of great importance now a days for the …

Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers
directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs …

We report electrically pumped continuous-wave (CW) InAs/GaAs quantum dot lasers directly
grown on planar exact silicon (001) with asymmetric waveguide structures. Surface …