Electronic conduction properties of indium tin oxide: single-particle and many-body transport
JJ Lin, ZQ Li - Journal of Physics: Condensed Matter, 2014 - iopscience.iop.org
Indium tin oxide (Sn-doped In 2 O 3− δ or ITO) is a very interesting and technologically
important transparent conducting oxide. This class of material has been extensively …
important transparent conducting oxide. This class of material has been extensively …
Extraordinary Hall effect in thin magnetic films and its potential for sensors, memories and magnetic logic applications
J Moritz, B Rodmacq, S Auffret… - Journal of Physics D …, 2008 - iopscience.iop.org
We investigate the potential of the extraordinary Hall effect (EHE) in magnetic thin films with
out-of-plane anisotropy for sensors, memories or logic applications. The scalability of EHE at …
out-of-plane anisotropy for sensors, memories or logic applications. The scalability of EHE at …
Giant Hall effect in superparamagnetic granular films
A comprehensive review of the giant Hall effect (GHE) is presented, with emphasis on novel
experimental data obtained in Ni–SiO2 and Co–SiO2 films prepared by co-sputtering. GHE …
experimental data obtained in Ni–SiO2 and Co–SiO2 films prepared by co-sputtering. GHE …
Spin correlations and colossal magnetoresistance in
This study aims to unravel the mechanism of colossal magnetoresistance (CMR) observed
in n-type HgCr 2 Se 4, in which low-density conduction electrons are exchange-coupled to a …
in n-type HgCr 2 Se 4, in which low-density conduction electrons are exchange-coupled to a …
Hopping of electron transport in granular Cux (SiO2) 1–x nanocomposite films deposited by ion-beam sputtering
The paper presents investigation into the Cu x (SiO 2) 1–x nanocomposite films (0.36< x<
0.73, 3–5 μm thick) deposited by ion-beam sputtering of the compound Cu/SiO 2 target in …
0.73, 3–5 μm thick) deposited by ion-beam sputtering of the compound Cu/SiO 2 target in …
Preparation of Discontinuous Cu/SiO2 Multilayers—AC Conduction and Determining the Measurement Uncertainty
This paper presents a test stand for testing alternating current electrical parameters of Cu–
SiO2 multilayer nanocomposite structures obtained by the dual-source non-reactive …
SiO2 multilayer nanocomposite structures obtained by the dual-source non-reactive …
Exploring the Metal–Insulator Transition in (Ga, Mn) As by Molecular Absorption
X Wang, C Zhang, H Wang, Y Yuan, Z Shang… - Nano Letters, 2022 - ACS Publications
The metal–insulator transition (MIT) is normally assisted by certain external power input,
such as temperature, pressure, strain, or doping. However, these may increase the disorder …
such as temperature, pressure, strain, or doping. However, these may increase the disorder …
Quantum interference and the giant Hall effect in percolating systems
We show that in metallic percolating networks the wave nature of the charge carriers can
significantly modify the classical picture of the Hall effect, especially in the metal …
significantly modify the classical picture of the Hall effect, especially in the metal …
High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation
T Yamin, YM Strelniker, A Sharoni - Scientific reports, 2016 - nature.com
Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the
manipulation of which is essential for their application as active device elements. However …
manipulation of which is essential for their application as active device elements. However …
[HTML][HTML] Influence of design and annealing parameters on measurements of AC properties of NiFe-SiO2 multilayer structures
In this article, due to the exceptionally interesting electrical and magnetic properties of
nanocomposites, which include ferromagnetic materials in a dielectric matrix, multilayer …
nanocomposites, which include ferromagnetic materials in a dielectric matrix, multilayer …