A semiconductor device includes a substrate and a phase-change material (PCM) radio
frequency (RF) switch, having a heating element, a PCM situated over the heating element …

A method for fabricating a semiconductor device includes forming first contacts to a heater
for programming, and forming second contacts to a phase-change material layer for …

US10916540B2 - Device including PCM RF switch integrated with group III-V semiconductors
- Google Patents US10916540B2 - Device including PCM RF switch integrated with group …

A radio frequency (RF) switching circuit includes stacked phase-change material (PCM) RF
switches. Each of the PCM RF switches includes a PCM, a heating element transverse to the …

A radio frequency (RF) switch includes a phase-change material (PCM), a heating element
underlying an active segment of the PCM and extending outward and transverse to the …

Embodiments of the present invention disclose a semiconductor structure with a multiple
layer phase change material stack and four electrodes that function as an inte-grated …

US11316105B2 - Phase change material switch and method of fabricating same - Google
Patents US11316105B2 - Phase change material switch and method of fabricating same …

In tuning a radio frequency (RF) module including a non-volatile tunable RF filter, a desired
frequency and an undesired frequency being provided by an amplifier of the RF module are …

A high-yield, tunable radio frequency (RF) filter includes a plurality of process-dependent
capacitors and a plurality of non-volatile RF switches. Each of the plurality of process …

A radio frequency (RF) switch includes a phase-change material (PCM) and a heating
element underlying an active segment of the PCM, the PCM and heating element being …