Millimeter-wave frequency reconfigurable dual-band CMOS power amplifier for 5G communication radios
J Lee, JS Paek, S Hong - IEEE Transactions on Microwave …, 2021 - ieeexplore.ieee.org
This article presents two millimeter-wave frequency reconfigurable dual-band CMOS power
amplifiers (PAs) for fifth-generation (5G) communications comprising a single-stage dual …
amplifiers (PAs) for fifth-generation (5G) communications comprising a single-stage dual …
Multi-Band Millimeter-Wave Circuits for Spectrum Aggregation in B5G Era: A Tutorial
J Wen, R Wang, X Wang, W Sun… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Multi-band millimeter-wave (mm-wave) circuits are crucial for achieving high speed, high
efficiency, flexible networking, and reducing hardware costs in mm-wave communication …
efficiency, flexible networking, and reducing hardware costs in mm-wave communication …
Learning Energy-Efficient Transmitter Configurations for Massive MIMO Beamforming
Hybrid beamforming (HBF) and antenna selection are promising techniques for improving
the energy efficiency (EE) of massive multiple-input multiple-output (mMIMO) systems …
the energy efficiency (EE) of massive multiple-input multiple-output (mMIMO) systems …
Learning Energy-Efficient Hardware Configurations for Massive MIMO Beamforming
Hybrid beamforming (HBF) and antenna selection are promising techniques for improving
the energy efficiency~(EE) of massive multiple-input multiple-output~(mMIMO) systems …
the energy efficiency~(EE) of massive multiple-input multiple-output~(mMIMO) systems …
Low consumption balanced front-end amplifiers robust to load variations in 65nm PD-SOI CMOS technology for 60 GHz short-range wireless applications
A Berthier, A Ghiotto, E Kerherve… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This brief presents two low consumption balanced front-end amplifiers designed in 65nm PD-
SOI CMOS technology dedicated to low output power 60 GHz short-range wireless …
SOI CMOS technology dedicated to low output power 60 GHz short-range wireless …
Design of Dual-Band 28/39GHz Power Amplifier MMIC in 0.15-μm GaN HEMT Technology
A dual-band high efficiency power amplifier (PA) at Ka-band (28/39 GHz) by using 0.15 um
GaN on SiC process is proposed. The PA utilizes two-stage two-way combined structure …
GaN on SiC process is proposed. The PA utilizes two-stage two-way combined structure …
A Dual-Band 28/38-GHz Power Amplifier With Inter-Band Suppression in 22-nm FD-SOI CMOS for Multi-Standard mm-Wave 5G Communications
In this article, we present a dual-band 28/38-GHz power amplifier (PA) with inter-band
suppression for millimeter-wave 5G communications. The dual-band operation is achieved …
suppression for millimeter-wave 5G communications. The dual-band operation is achieved …
A Wideband High-Gain Power Amplifier Operating in the D Band
V Manouras, I Papananos - 2022 IFIP/IEEE 30th International …, 2022 - ieeexplore.ieee.org
In this paper the design, analysis and implementation of a 3-stage, broadband power
amplifier (BPA), is presented. The device is suitable for medium-distance wireless and …
amplifier (BPA), is presented. The device is suitable for medium-distance wireless and …
Design of a dual‐band power amplifier over an octave bandwidth employing dual‐band resonators
J Liu, C Liu, Z Shao, W Shi - International Journal of Numerical …, 2024 - Wiley Online Library
In this article, a compact dual‐band resonator is proposed for designing dual‐band power
amplifiers (DBPAs). The proposed resonator has the characteristics of the band‐pass filters …
amplifiers (DBPAs). The proposed resonator has the characteristics of the band‐pass filters …
A Ku-Band Power Amplifier in 22nm FDSOI
A Haag, AÇ Ulusoy - 2024 IEEE 24th Topical Meeting on …, 2024 - ieeexplore.ieee.org
This paper presents the design of an 18 GHz power amplifier (PA) in GlobalFoundries' 22
nm fully-depleted silicon on insulator (FD-SOI) technology. The PA features a single-ended …
nm fully-depleted silicon on insulator (FD-SOI) technology. The PA features a single-ended …