Behavioral modeling and linearization of wideband RF power amplifiers using BiLSTM networks for 5G wireless systems
Characterization and linearization of RF power amplifiers (PAs) are key issues of fifth-
generation wireless communication systems, especially when high peak-to-average ratio …
generation wireless communication systems, especially when high peak-to-average ratio …
An artificial neural network-based electrothermal model for GaN HEMTs with dynamic trapping effects consideration
AD Huang, Z Zhong, W Wu… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
A complete solution from parameter extraction to large-signal electrothermal model
generation for gallium nitride (GaN) HEMTs is presented in this paper with the consideration …
generation for gallium nitride (GaN) HEMTs is presented in this paper with the consideration …
Review of RF Device Behavior Model: Measurement Techniques, Applications, and Challenges
H Li, J Su, R Wang, Z Liu, M Xu - Micromachines, 2023 - mdpi.com
This review presents a concise overview of RF (radio frequency) power transistor behavior
models, which is crucial for optimizing RF performance in high-frequency applications like …
models, which is crucial for optimizing RF performance in high-frequency applications like …
Future device modeling trends
DE Root - IEEE Microwave Magazine, 2012 - ieeexplore.ieee.org
Good transistor models are essential for efficient computer-aided-design (CAD) of nonlinear
microwave and RF circuits, monolithic microwave integrated circuits (MMICs), power …
microwave and RF circuits, monolithic microwave integrated circuits (MMICs), power …
Behavioral modeling of GaN FETs: A load-line approach
In this paper, a new model formulation is presented that correctly accounts for low-frequency
dispersion (ie, trapping and thermal phenomena) affecting field-effect transistors (FETs). In …
dispersion (ie, trapping and thermal phenomena) affecting field-effect transistors (FETs). In …
A new modeling technique for microwave multicell transistors based on EM simulations
Dealing with high-power operation (ie,> 100 W) is extremely critical to power-amplifier
designers due to the lack of accurate transistor models of multicell (ie, powerbar) devices …
designers due to the lack of accurate transistor models of multicell (ie, powerbar) devices …
On the Extraction of Accurate Non-Quasi-Static Transistor Models for -Band Amplifier Design: Learning From the Past
V Vadalà, A Raffo, A Colzani… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
In this article, a non-quasi-static (NQS) nonlinear transistor model oriented to-band power
amplifier (PA) design is discussed. A new formulation that describes the millimeter-wave …
amplifier (PA) design is discussed. A new formulation that describes the millimeter-wave …
The large world of FET small‐signal equivalent circuits
The small‐signal equivalent circuit modeling of microwave field‐effect transistors (FETs) is
an evergreen and ever flourishing research field that has to be up‐to‐date with …
an evergreen and ever flourishing research field that has to be up‐to‐date with …
Adaptive deep learning aided digital predistorter considering dynamic envelope
Memory effects of radio frequency power amplifiers (PAs) can interact with dynamic
transmitting signals, dynamic operations, and dynamic environment, resulting in complicated …
transmitting signals, dynamic operations, and dynamic environment, resulting in complicated …
An evolutionary multilayer perceptron-based large-signal model of GaN HEMTs including self-heating and trapping effects
Neural networks are widely used to build large-signal models; an appropriate network
architecture is important for high model accuracy and good generalization ability. In this …
architecture is important for high model accuracy and good generalization ability. In this …