[HTML][HTML] Recent advances in wide-spectrum photodetectors based on low-dimensional semiconductors
Y Yu, Y Hu, J Yang, Z Wei - Materials Today Electronics, 2022 - Elsevier
Compared with three-dimensional semiconductors, low-dimensional (LD) semiconductors
have unique atomic arrangements and excellent optical and electrical characteristics, such …
have unique atomic arrangements and excellent optical and electrical characteristics, such …
CuO nanowire-based metal semiconductor metal infrared photodetector
Abstract Metal–semiconductor-metal (MSM) infrared photodetector-based Ag/CuO NW/Ag
was fabricated using glancing angle deposition technique integrated RF sputtering machine …
was fabricated using glancing angle deposition technique integrated RF sputtering machine …
[HTML][HTML] Monolithic InSb nanostructure photodetectors on Si using rapid melt growth
Monolithic integration of InSb on Si could be a key enabler for future electronic and
optoelectronic applications. In this work, we report the fabrication of InSb metal …
optoelectronic applications. In this work, we report the fabrication of InSb metal …
Fabrication of Single‐Crystalline InSb‐on‐Insulator by Rapid Melt Growth
H Menon, NP Morgan, C Hetherington… - … status solidi (a), 2022 - Wiley Online Library
InSb has the smallest bandgap and highest electron mobility among III‐V semiconductors
and is widely used for photodetectors and high‐frequency electronic applications …
and is widely used for photodetectors and high‐frequency electronic applications …
Improved quality of InSb-on-insulator microstructures by flash annealing into melt
H Menon, L Södergren, R Athle, J Johansson… - …, 2021 - iopscience.iop.org
Monolithic integration of III–V semiconductors with Silicon technology has instigated a wide
range of new possibilities in the semiconductor industry, such as combination of digital …
range of new possibilities in the semiconductor industry, such as combination of digital …
Facile surface treatment of precursors before rapid melt growth of GaSb on silicon
The efficient monolithic III-V integration on silicon (Si) substrates can leverage the excellent
optoelectronic properties of III-V semiconductors and the Si microfabrication technology for …
optoelectronic properties of III-V semiconductors and the Si microfabrication technology for …
Band bending and effective index in the engineered Mach–zehnder interferometer-based electrolytic sensor
Abstract We studied a Mach–Zehnder Interferometer (MZI)-based electrolytic sensor on a
silicon-on-insulator (SOI) platform. First, the Si waveguide, integrated with the dielectric layer …
silicon-on-insulator (SOI) platform. First, the Si waveguide, integrated with the dielectric layer …
[HTML][HTML] GaSbBi Metal Semiconductor Metal Detectors for Mid-Infrared Sensing
The viability of incorporating Bi and N into GaSb layers to realise photodetectors operating
in the mid-infrared has been investigated. The effects of Bi and N on the cut-off wavelength …
in the mid-infrared has been investigated. The effects of Bi and N on the cut-off wavelength …
Implementation of lateral Ge–on–Si heterojunction photodetectors via rapid melt growth and self-aligned microbonding for Si photonics
Heterogeneous integration of Ge on a Si lateral p–i–n junction by rapid melt-growth method
and self-aligned microbonding is presented. A very thin Ge (100 nm) strip butt-coupled to a …
and self-aligned microbonding is presented. A very thin Ge (100 nm) strip butt-coupled to a …
[引用][C] Fabrication of GaSb Microdisc Resonator on Silicon Substrate by Rapid Melt Growth Process
MCM Lee, CC Cheng, CY Lin, YS Wun… - … Conference on Optical …, 2019 - ieeexplore.ieee.org
Fabrication of GaSb Microdisc Resonator on Silicon Substrate by Rapid Melt Growth
Process Page 1 • xxv • 2019 International Conference on Optical MEMS and Nanophotonics …
Process Page 1 • xxv • 2019 International Conference on Optical MEMS and Nanophotonics …