Applications and impacts of nanoscale thermal transport in electronics packaging
RJ Warzoha, AA Wilson… - Journal of …, 2021 - asmedigitalcollection.asme.org
This review introduces relevant nanoscale thermal transport processes that impact thermal
abatement in power electronics applications. Specifically, we highlight the importance of …
abatement in power electronics applications. Specifically, we highlight the importance of …
Near-junction thermal managements of electronics
Near-junction thermal management of electronics has received a lot of attention in the past
decades but there are still many challenges in this area. This chapter provides a …
decades but there are still many challenges in this area. This chapter provides a …
[HTML][HTML] Thermal transport in defective and disordered materials
With significant recent advancements in thermal sciences—such as the development of new
theoretical and experimental techniques, and the discovery of new transport mechanisms—it …
theoretical and experimental techniques, and the discovery of new transport mechanisms—it …
Low thermal boundary resistance interfaces for GaN-on-diamond devices
The development of GaN-on-diamond devices holds much promise for the creation of high-
power density electronics. Inherent to the growth of these devices, a dielectric layer is placed …
power density electronics. Inherent to the growth of these devices, a dielectric layer is placed …
Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors
Self-heating in AlGaN/GaN high electron mobility transistors (HEMTs) negatively impacts
device performance and reliability. Under nominal operating conditions, a hot-spot in the …
device performance and reliability. Under nominal operating conditions, a hot-spot in the …
Near-junction phonon thermal spreading in GaN HEMTs: A comparative study of simulation techniques by full-band phonon Monte Carlo method
Accurate thermal simulation is essential for the near-junction thermal management and
electro-thermal co-design of GaN HEMTs. While various methods have been employed to …
electro-thermal co-design of GaN HEMTs. While various methods have been employed to …
Bias dependence of non-Fourier heat spreading in GaN HEMTs
In this article, self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs)
is studied by combining the technology computer-aided design (TCAD) and phonon Monte …
is studied by combining the technology computer-aided design (TCAD) and phonon Monte …
Observation of ballistic-diffusive thermal transport in GaN transistors using thermoreflectance thermal imaging
To develop effective thermal management strategies for gallium-nitride (GaN) transistors, it
is essential to accurately predict the device junction temperature. Since the width of the heat …
is essential to accurately predict the device junction temperature. Since the width of the heat …
Cumulative impacts of proton irradiation on the self-heating of AlGaN/GaN HEMTs
The impact of proton irradiation on the self-heating of AlGaN/GaN high-electron-mobility
transistors (HEMTs) was studied at an energy of 1 MeV and under a fluence level of 2× 1015 …
transistors (HEMTs) was studied at an energy of 1 MeV and under a fluence level of 2× 1015 …
Hybrid Monte Carlo-diffusion studies of modeling self-heating in ballistic-diffusive regime for gallium nitride HEMTs
Exact assessment of self-heating is of great importance to the thermal management of
electronic devices, especially when completely considering the cross-scale heat conduction …
electronic devices, especially when completely considering the cross-scale heat conduction …