[PDF][PDF] Enabling of CMOS Circuit using Dual Material Gate Germanium Pocket Induced FDSOI MOSFET
This research presents a comparison of the electrical performance of a double-side induced
germanium-pocket (IGP) FD-SOI MOSFET and ad ual material gate IGPFDSOI …
germanium-pocket (IGP) FD-SOI MOSFET and ad ual material gate IGPFDSOI …
[PDF][PDF] Tunable RF MEMS Inductors for Two-Frequency Bands
H Nizar, B Kamel - WSEAS Transactions on Electronics, 2024 - wseas.com
This paper presents the design and simulation of two-variable MEMS inductors for high-
frequency applications. In two cases, the inductors' cores are enclosed between two tunable …
frequency applications. In two cases, the inductors' cores are enclosed between two tunable …