Semiconductor nanowires: to grow or not to grow?
PC McIntyre, AF i Morral - Materials Today Nano, 2020 - Elsevier
Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
Planar growth, integration, and applications of semiconducting nanowires
Y Sun, T Dong, L Yu, J Xu, K Chen - Advanced Materials, 2020 - Wiley Online Library
Silicon and other inorganic semiconductor nanowires (NWs) have been extensively
investigated in the last two decades for constructing high‐performance nanoelectronics …
investigated in the last two decades for constructing high‐performance nanoelectronics …
Large-scale synthesis of highly uniform silicon nanowire arrays using metal-assisted chemical etching
The combination of metal-assisted chemical etching (MACE) with colloidal lithography has
emerged as a simple and cost-effective approach to nanostructure silicon. It is especially …
emerged as a simple and cost-effective approach to nanostructure silicon. It is especially …
Composition of wide bandgap semiconductor materials and nanostructures measured by atom probe tomography and its dependence on the surface electric field
Atom probe tomography allows for three-dimensional reconstruction of the elemental
distribution in materials at the nanoscale. However, the measurement of the chemical …
distribution in materials at the nanoscale. However, the measurement of the chemical …
Highly sensitive ammonia gas detection at room temperature by integratable silicon nanowire field-effect sensors
X Song, R Hu, S Xu, Z Liu, J Wang, Y Shi… - … Applied Materials & …, 2021 - ACS Publications
Toxic gas monitoring at room temperature (RT) is of great concern to public health and
safety, where ultrathin silicon nanowires (SiNWs), with diameter< 80 nm, are ideal one …
safety, where ultrathin silicon nanowires (SiNWs), with diameter< 80 nm, are ideal one …
[HTML][HTML] Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
The development of non-equilibrium group IV nanoscale alloys is critical to achieving new
functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap …
functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap …
Morphology-graded silicon nanowire arrays via chemical etching: Engineering optical properties at the nanoscale and macroscale
We report on a quick, simple, and cost-effective solution-phase approach to prepare
centimeter-sized morphology-graded vertically aligned Si nanowire arrays. Gradients in the …
centimeter-sized morphology-graded vertically aligned Si nanowire arrays. Gradients in the …
Silicon nanostructures for solar-driven catalytic applications
Silicon nanostructures exhibit prominent properties in solar energy conversion, which
particularly offer tunable light harvesting and facile surface modification in comparison with …
particularly offer tunable light harvesting and facile surface modification in comparison with …
Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters
Highly oriented Ge0. 81Sn0. 19 nanowires have been synthesized by a low-temperature
chemical vapor deposition growth technique. The nanostructures form by a self-seeded …
chemical vapor deposition growth technique. The nanostructures form by a self-seeded …
Atomic gold–enabled three-dimensional lithography for silicon mesostructures
Three-dimensional (3D) mesostructured semiconductors show promising properties and
applications; however, to date, few methods exist to synthesize or fabricate such materials …
applications; however, to date, few methods exist to synthesize or fabricate such materials …