Metal gate work function engineering for nano-scaled trigate FinFET
M Lalruatfela, S Panchanan, R Maity… - Microsystem Technologies, 2024 - Springer
Diminution of leakage current is essential for the semiconductor device operating in the
nanometer regime. This paper aims to analyse the consequence of metal work function on …
nanometer regime. This paper aims to analyse the consequence of metal work function on …
Biomolecule detection using GaAs1− xSbX FET based dielectric modulated label-free biosensor
Dielectric Modulated (DM) biosensors are being developed for label-free biosensing based
on varying dielectric constants of the cavity region. In this paper, we proposed a GaAs 1− x …
on varying dielectric constants of the cavity region. In this paper, we proposed a GaAs 1− x …
Design principles of 22-nm SOI LDD-FinFETs for ultra-low-power analog circuits
In this article, analog/radio frequency (RF) performance metrics along with linearity analysis
of a silicon-on-insulator lightly doped drain (LDD)-finFET are investigated through 3D TCAD …
of a silicon-on-insulator lightly doped drain (LDD)-finFET are investigated through 3D TCAD …
Impact of the mole fraction modulation on the RF/DC performance of GaAs1−xSbx FinFET
The impact of mole fraction variation on the RF/DC performance of GaAs1− x Sb x‐based
FinFET has been examined in this study. Changing the Sb mole fraction has substantial …
FinFET has been examined in this study. Changing the Sb mole fraction has substantial …
22 nm LDD FinFET Based Novel Mixed Signal Application: Design and Investigation
In this paper, a sigma-delta (Ʃ Δ) analog to digital converter (ADC) has been designed and
circuit performance metrics have been investigated using 22 nm silicon on insulator (SOI) …
circuit performance metrics have been investigated using 22 nm silicon on insulator (SOI) …
Performance comparison of III–V and silicon FinFETs for ultra-low power VLSI applications
In this paper, the device performance of a three-dimensional (3D) FinFET is investigated and
a suitable comparison is performed by employing conventional Silicon and III-V materials …
a suitable comparison is performed by employing conventional Silicon and III-V materials …
Analysis of GaAs1-xSbx Label-Free Biosensor using Trigate and Gate-all-around FET
In this paper, we have analyzed the sensitivity of Trigate (TG) and gate-all-around (GAA)
FET-based dielectric modulated (DM) biosensors. Through DM biosensors, label-free …
FET-based dielectric modulated (DM) biosensors. Through DM biosensors, label-free …
Label-Free Biosensing using Dielectric Modulated GaAs1-x Sbx FinFET under Dry/Wet Environment
Using dielectric modulated biosensors, labelfree biosensing could be obtained by
appropriate tuning the dielectric constants (K) of the cavity region, which is mimicked as the …
appropriate tuning the dielectric constants (K) of the cavity region, which is mimicked as the …
Silicide Ultrathin Impact Ionization MOS (SUTIMOS) for Ultra Low Power VLSI Application
In this article, Impact Ionization Metal Oxide Semiconductor (IMOS) device is investigated
with silicide source material. A comparatively study of Silicide Ultrathin Impact Ionization …
with silicide source material. A comparatively study of Silicide Ultrathin Impact Ionization …