Neuromorphic electronics draw attention as innovative approaches that facilitate hardware
implementation of next‐generation artificial intelligent system including neuromorphic in …

The past 20 years has witnessed a rapid expansion of applications using metal oxide
semiconductor devices that ranges from displays technology, to clothing and packaging …

Amorphous oxide semiconductors (AOSs)—ternary or quaternary oxides of post‐transition
metals such as In‐Sn‐O, Zn‐Sn‐O, or In‐Ga‐Zn‐O—have been known for a decade and …

Since the invention of amorphous indium–gallium–zinc–oxide (IGZO) based thin-film
transistors (TFTs) by Hideo Hosono in 2004, investigations on the topic of IGZO TFTs have …

Wide-bandgap semiconductors possess much larger energy bandgaps in comparison to
traditional semiconductors such as silicon, rendering them very promising for applications in …

Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and
through cost-effective solution-based processes on a wide range of low-cost flexible and …

A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal
electronic device of thin-film transistor (TFT) coupled with two-terminal p–n junction …

In this review, we discuss the recent developments of high-performance and improved-
stability of indium-oxide-based transparent amorphous-oxide semiconductor (TAOS) thin …

Amorphous oxide semiconductor thin film transistors and sensors constitute fundamental
building blocks for a new generation of applications ranging from interactive displays and …

In this work, indium-tin-oxide (ITO) transistors with atomically thin channel thickness () of 2.1
nm realized by atomic layer deposition (ALD) are demonstrated. A maximum ON-state …