The rapid advancement of new technologies has resulted in a surge of data, while
conventional computers are nearing their computational limits. The prevalent von Neumann …

In this paper, we propose and simulate a novel drain-engineered structure of a quadruple-
gate tunnel fieldeffect transistor (TFET). The proposed device employs a lateral dual source …

In this paper, we propose and simulate a charge-plasma (CP)-based dielectrically
modulated (DM) source-engineered Schottky barrier field-effect transistor (SE-SB-FET) as a …

In this work, a new structure of Schottky tunneling MOSFET has been designed and
simulated. The proposed device structure uses floating gates and dual material main gates …

In this work, a novel structure of Dielectrically Modulated Organic Thin Film Transistor
(OTFT) for biosensing applications is presented. The proposed device uses lateral metal …

In this paper, we intend to show the role of plasma parameters on the performance of the
simulated device Plasma-Assisted Vertically Aligned Dual-Metal Carbon Nanotube Field …

This book aims at describing in detail the different layout techniques for remarkably boosting
the electrical performance and the ionizing radiation tolerance of planar Metal-Oxide …

This paper reports an unique approach to suppress ambipolarity and enhance drive current
in tunnel field effect transistor (TFET) by incorporating vertically extending drain in double …

In this paper, we propose and simulate a novel Schottky barrier MOSFET (SB-MOSFET) with
improved performance in comparison to the conventional SB-MOSFET. The proposed …

In this paper, to solve the problem of higher ambipolar leakage current (I ambipolar) of
Dielectric Engineered (DE) Dopant Segregated (DG) Schottky Barrier (SB) MOSFET (DE DS …