DFT investigation of BN, AlN, and SiC fullerene sensors for arsine gas detection and removal
Quantum chemical density functional theory (DFT) calculations were performed to
investigate the adsorption of arsine (AsH3) gaseous substance at the surface of …
investigate the adsorption of arsine (AsH3) gaseous substance at the surface of …
Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nm
Silicon (Si) has been scaled below 10 nm in multigate and silicon-on-insulator (SOI) device
technologies, but clearly Si thickness cannot be reduced indefinitely, as we will run out of …
technologies, but clearly Si thickness cannot be reduced indefinitely, as we will run out of …
Tertiarybutylarsine damage-free thin-film doping and conformal surface coverage of substrate-released horizontal Si nanowires
F Meaney, K Thomas, J MacHale, G Mirabelli… - Applied Surface …, 2020 - Elsevier
Conformal damage-free doping is the holy grail for 3D semiconductor device structures,
such as those used in multi-gate and nanowire-based field effect transistors (FETs). The …
such as those used in multi-gate and nanowire-based field effect transistors (FETs). The …
Electrical Evaluation of Ion Implant, Liquid, and Gas Sources for Doping of Ultra-Thin Body SOI and Si Nanowire Structures
Introduction of dopant impurities in Si can be done in-situ during epitaxial growth, or ex-situ
for localized material modification using a variety of sources including ion implantation …
for localized material modification using a variety of sources including ion implantation …