Heusler alloys are theoretically predicted to become half-metals at room temperature (RT).
The advantages of using these alloys are good lattice matching with major substrates, high …

The field of spintronics has attracted tremendous attention recently owing to its ability to offer
a solution for the present-day problem of increased power dissipation in electronic circuits …

Magnetoresistive (MR) sensors have been identified as promising candidates for the
development of high-performance magnetometers due to their high sensitivity, low cost, low …

Epitaxial magnetic tunnel junctions (MTJs) with a Co 2 FeAl/CoFe (0.5 nm)/MgAl 2 O 4/Co 2
FeAl (001) structure were fabricated by magnetron sputtering. High-temperature in situ …

We developed a fabrication process of an epitaxial MgAl 2 O 4 barrier for magnetic tunnel
junctions (MTJs) using a direct sputtering method from an MgAl 2 O 4 spinel sintered target …

Spinel MgAl 2 O 4 and family oxides are emerging barrier materials useful for magnetic
tunnel junctions (MTJs). We report large tunnel magnetoresistance (TMR) ratios up to 429 …

Two-dimensional (2D) intrinsic magnets have been used to construct magnetic tunnel
junctions (MTJs) with a high tunneling magnetoresistance (TMR) ratio, including van der …

We report perpendicular magnetic anisotropy (PMA) induced at Co 2 FeAl/MgAl 2 O 4 (001)
epitaxial interfaces prepared by magnetron sputtering and post-oxidation of MgAl layers. A …

In this study, a quaternary Heusler alloy (QHA) CoYVSn investigated employing density
functional theory (DFT) taking into account exchange potential perdew-burke-ernzerhof …

We developed a fully epitaxial magnetic tunnel junction on an 8 ″silicon wafer by using a
mass-production sputtering apparatus and achieved a high magnetoresistance ratio …