Resistive switching materials for information processing
The rapid increase in information in the big-data era calls for changes to information-
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …
Memristor modeling: challenges in theories, simulations, and device variability
This article presents a review of the current development and challenges in memristor
modeling. We review the mechanisms of memristive devices based on various …
modeling. We review the mechanisms of memristive devices based on various …
Extra storage capacity in transition metal oxide lithium-ion batteries revealed by in situ magnetometry
In lithium-ion batteries (LIBs), many promising electrodes that are based on transition metal
oxides exhibit anomalously high storage capacities beyond their theoretical values …
oxides exhibit anomalously high storage capacities beyond their theoretical values …
Electrical control of 2D magnetism in bilayer CrI3
Controlling magnetism via electric fields addresses fundamental questions of magnetic
phenomena and phase transitions,–, and enables the development of electrically coupled …
phenomena and phase transitions,–, and enables the development of electrically coupled …
Introduction to spin wave computing
This paper provides a tutorial overview over recent vigorous efforts to develop computing
systems based on spin waves instead of charges and voltages. Spin-wave computing can …
systems based on spin waves instead of charges and voltages. Spin-wave computing can …
[HTML][HTML] Spintronics based random access memory: a review
This article reviews spintronics based memories, in particular, magnetic random access
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …
Magnetoelectric Coupling in Multiferroic Bilayer
X Liu, AP Pyatakov, W Ren - Physical Review Letters, 2020 - APS
Based on the first-principles prediction, we report the magnetoelectric coupling effect in two-
dimensional multiferroic bilayer VS 2. The ground-state 3 R-type stacking breaks space …
dimensional multiferroic bilayer VS 2. The ground-state 3 R-type stacking breaks space …
Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications
Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …
breakthrough basic research discoveries and industrial applications in the fields of magnetic …
A review on current status and mechanisms of room-temperature magnetoelectric coupling in multiferroics for device applications
R Gupta, RK Kotnala - Journal of Materials Science, 2022 - Springer
Magnetoelectric coupling phenomenon in multiferroics has attracted considerable research
activities in the last decade due to its wide range of applications in spintronic, data storage …
activities in the last decade due to its wide range of applications in spintronic, data storage …