Resistive switching materials for information processing

Z Wang, H Wu, GW Burr, CS Hwang, KL Wang… - Nature Reviews …, 2020 - nature.com
The rapid increase in information in the big-data era calls for changes to information-
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …

Memristor modeling: challenges in theories, simulations, and device variability

L Gao, Q Ren, J Sun, ST Han, Y Zhou - Journal of Materials Chemistry …, 2021 - pubs.rsc.org
This article presents a review of the current development and challenges in memristor
modeling. We review the mechanisms of memristive devices based on various …

Extra storage capacity in transition metal oxide lithium-ion batteries revealed by in situ magnetometry

Q Li, H Li, Q Xia, Z Hu, Y Zhu, S Yan, C Ge, Q Zhang… - Nature materials, 2021 - nature.com
In lithium-ion batteries (LIBs), many promising electrodes that are based on transition metal
oxides exhibit anomalously high storage capacities beyond their theoretical values …

Electrical control of 2D magnetism in bilayer CrI3

B Huang, G Clark, DR Klein, D MacNeill… - Nature …, 2018 - nature.com
Controlling magnetism via electric fields addresses fundamental questions of magnetic
phenomena and phase transitions,–, and enables the development of electrically coupled …

Introduction to spin wave computing

A Mahmoud, F Ciubotaru, F Vanderveken… - Journal of Applied …, 2020 - pubs.aip.org
This paper provides a tutorial overview over recent vigorous efforts to develop computing
systems based on spin waves instead of charges and voltages. Spin-wave computing can …

[HTML][HTML] Spintronics based random access memory: a review

S Bhatti, R Sbiaa, A Hirohata, H Ohno, S Fukami… - Materials Today, 2017 - Elsevier
This article reviews spintronics based memories, in particular, magnetic random access
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …

Magnetoelectric Coupling in Multiferroic Bilayer

X Liu, AP Pyatakov, W Ren - Physical Review Letters, 2020 - APS
Based on the first-principles prediction, we report the magnetoelectric coupling effect in two-
dimensional multiferroic bilayer VS 2. The ground-state 3 R-type stacking breaks space …

Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications

B Dieny, M Chshiev - Reviews of Modern Physics, 2017 - APS
Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …

A review on current status and mechanisms of room-temperature magnetoelectric coupling in multiferroics for device applications

R Gupta, RK Kotnala - Journal of Materials Science, 2022 - Springer
Magnetoelectric coupling phenomenon in multiferroics has attracted considerable research
activities in the last decade due to its wide range of applications in spintronic, data storage …

Magnetoelectric materials and devices

X Liang, H Chen, NX Sun - APL Materials, 2021 - pubs.aip.org
Over the past few decades, magnetoelectric (ME) materials and devices have been
investigated extensively, which is one of the most interesting research topics since the …