A novel 7T carbon nanotube field effect transistor (CNTFET)-based static random-access
memory (SRAM) cell is proposed in this paper. Power and noise margin performances of the …

In wireless sensor networks, conserving power is vital for prolonging battery life. This
research introduces a groundbreaking solution: a 9T carbon nanotube‐field effect transistor …

This research paper proposes a low-power, high-stability 8T static random access memory
(SRAM) cell. The proposed SRAM cell is a modified structure of the conventional 6T SRAM …

As CMOS devices near the nanometer regime, scaling them down has a number of
repercussions, such as short channel effects and process fluctuations, which degrade the …

With the increase in demand for low power memory, this is achieved by reducing the
leakage currents. Power dissipation mainly occurs due to leakage currents of different forms …

Now-a-days, in the digital technology era, Static Random Access Memory (SRAM) plays an
important role to provide memory capacity for electronic devices. FinFET has claimed many …

When an adder circuit, which uses less power and operates at a higher speed, is introduced
as a fundamental building block, the multiplier, arithmetic and logic unit (ALU), and digital …