Modulating surface/interface structure of emerging InGaN nanowires for efficient photoelectrochemical water splitting

J Lin, W Wang, G Li - Advanced Functional Materials, 2020 - Wiley Online Library
Photoelectrochemical (PEC) water splitting provides a promising approach to convert solar
energy into hydrogen. Developing active, stable, and cost‐effective semiconductors …

The 2020 UV emitter roadmap

H Amano, R Collazo, C De Santi… - Journal of Physics D …, 2020 - iopscience.iop.org
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …

[HTML][HTML] Recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate

H Wu, K Zhang, C He, L He, Q Wang, W Zhao, Z Chen - Crystals, 2021 - mdpi.com
Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4
eV of GaN, have attracted great attention recently. As a typical representative, wurtzite …

Improvement mechanism of sputtered AlN films by high-temperature annealing

S Xiao, R Suzuki, H Miyake, S Harada… - Journal of Crystal Growth, 2018 - Elsevier
The improvement mechanism of sputtered AlN films by high temperature annealing in
nitrogen ambient has been investigated. Sputtered AlN films were annealed at 1100–1700° …

[HTML][HTML] The role of chemical potential in compensation control in Si: AlGaN

S Washiyama, P Reddy, B Sarkar… - Journal of Applied …, 2020 - pubs.aip.org
Reduction in compensation in Si-doped Al-rich AlGaN is demonstrated via chemical
potential control (CPC). The chemical potentials and the resulting formation energies of …

Lattice polarity manipulation of quasi‐vdW epitaxial GaN films on graphene through interface atomic configuration

F Liu, T Wang, Z Zhang, T Shen, X Rong… - Advanced …, 2022 - Wiley Online Library
Quasi van der Waals epitaxy, a pioneering epitaxy of sp3‐hybridized semiconductor films on
sp2‐hybridized 2D materials, provides a way, in principle, to achieve single‐crystal …

Structures, properties and applications of two-dimensional metal nitrides: from nitride MXene to other metal nitrides

F Zheng, X Xiao, J Xie, L Zhou, Y Li, H Dong - 2D Materials, 2022 - iopscience.iop.org
Abstract The two-dimensional (2D) metal nitrides (MNs), including group IIA nitrides, group
IIIA nitrides, nitride MXene and other transition metal nitrides (TMNs), exhibit unique …

Low dislocation density AlN on sapphire prepared by double sputtering and annealing

D Wang, K Uesugi, S Xiao, K Norimatsu… - Applied Physics …, 2020 - iopscience.iop.org
AlN on sapphire with dislocation density of 10 7 cm− 2 was prepared by double sputtering
and annealing processes. Full width at half maximum values of X-ray rocking curve for $\left …

Interfacial modulated lattice-polarity-controlled epitaxy of III-nitride heterostructures on Si (111)

P Wang, D Wang, S Mondal, Y Wu… - ACS Applied Materials & …, 2022 - ACS Publications
Monolithic integration of wurtzite III-nitrides with nonpolar silicon (Si), the two most-produced
semiconductor materials, is essential and critical for a broad range of applications in …

Polarity control of sputter-deposited AlN with high-temperature face-to-face annealing

K Shojiki, K Uesugi, S Xiao, H Miyake - Materials Science in Semiconductor …, 2023 - Elsevier
III-nitride semiconductors have crystallographic polarity; therefore, controlling the polarity of
these materials can realize novel device structures. However, this has been difficult to …