Modulating surface/interface structure of emerging InGaN nanowires for efficient photoelectrochemical water splitting
J Lin, W Wang, G Li - Advanced Functional Materials, 2020 - Wiley Online Library
Photoelectrochemical (PEC) water splitting provides a promising approach to convert solar
energy into hydrogen. Developing active, stable, and cost‐effective semiconductors …
energy into hydrogen. Developing active, stable, and cost‐effective semiconductors …
The 2020 UV emitter roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
[HTML][HTML] Recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate
Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4
eV of GaN, have attracted great attention recently. As a typical representative, wurtzite …
eV of GaN, have attracted great attention recently. As a typical representative, wurtzite …
Improvement mechanism of sputtered AlN films by high-temperature annealing
The improvement mechanism of sputtered AlN films by high temperature annealing in
nitrogen ambient has been investigated. Sputtered AlN films were annealed at 1100–1700° …
nitrogen ambient has been investigated. Sputtered AlN films were annealed at 1100–1700° …
[HTML][HTML] The role of chemical potential in compensation control in Si: AlGaN
Reduction in compensation in Si-doped Al-rich AlGaN is demonstrated via chemical
potential control (CPC). The chemical potentials and the resulting formation energies of …
potential control (CPC). The chemical potentials and the resulting formation energies of …
Lattice polarity manipulation of quasi‐vdW epitaxial GaN films on graphene through interface atomic configuration
Quasi van der Waals epitaxy, a pioneering epitaxy of sp3‐hybridized semiconductor films on
sp2‐hybridized 2D materials, provides a way, in principle, to achieve single‐crystal …
sp2‐hybridized 2D materials, provides a way, in principle, to achieve single‐crystal …
Structures, properties and applications of two-dimensional metal nitrides: from nitride MXene to other metal nitrides
Abstract The two-dimensional (2D) metal nitrides (MNs), including group IIA nitrides, group
IIIA nitrides, nitride MXene and other transition metal nitrides (TMNs), exhibit unique …
IIIA nitrides, nitride MXene and other transition metal nitrides (TMNs), exhibit unique …
Low dislocation density AlN on sapphire prepared by double sputtering and annealing
AlN on sapphire with dislocation density of 10 7 cm− 2 was prepared by double sputtering
and annealing processes. Full width at half maximum values of X-ray rocking curve for $\left …
and annealing processes. Full width at half maximum values of X-ray rocking curve for $\left …
Interfacial modulated lattice-polarity-controlled epitaxy of III-nitride heterostructures on Si (111)
Monolithic integration of wurtzite III-nitrides with nonpolar silicon (Si), the two most-produced
semiconductor materials, is essential and critical for a broad range of applications in …
semiconductor materials, is essential and critical for a broad range of applications in …
Polarity control of sputter-deposited AlN with high-temperature face-to-face annealing
III-nitride semiconductors have crystallographic polarity; therefore, controlling the polarity of
these materials can realize novel device structures. However, this has been difficult to …
these materials can realize novel device structures. However, this has been difficult to …