Plasma-Assisted Nanofabrication: The Potential and Challenges in Atomic Layer Deposition and Etching
The growing need for increasingly miniaturized devices has placed high importance and
demands on nanofabrication technologies with high-quality, low temperatures, and low-cost …
demands on nanofabrication technologies with high-quality, low temperatures, and low-cost …
Improving performance and breakdown voltage in normally-off GaN recessed gate MIS-HEMTs using atomic layer etching and gate field plate for high-power device …
AC Liu, PT Tu, HC Chen, YY Lai, PC Yeh, HC Kuo - Micromachines, 2023 - mdpi.com
A typical method for normally-off operation, the metal–insulator–semiconductor-high
electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches …
electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches …
Improved performance of GaN metal-insulator-semiconductor high-electron-mobility transistors towards power applications
J He - 2024 - theses.lib.polyu.edu.hk
GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) are
potential candidates for the next generation of high-power electronics. To further reduce …
potential candidates for the next generation of high-power electronics. To further reduce …
[PDF][PDF] Plasma-Assisted Nanofabrication: The Potential and Challenges in Atomic Layer Deposition and Etching. Nanomaterials 2022, 12, 3497
W Chiappim, BB Neto, M Shiotani, J Karnopp… - 2022 - researchgate.net
The growing need for increasingly miniaturized devices has placed high importance and
demands on nanofabrication technologies with high-quality, low temperatures, and low-cost …
demands on nanofabrication technologies with high-quality, low temperatures, and low-cost …