Metal–oxide RRAM
In this paper, recent progress of binary metal–oxide resistive switching random access
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …
Resistive random access memory (ReRAM) based on metal oxides
H Akinaga, H Shima - Proceedings of the IEEE, 2010 - ieeexplore.ieee.org
In this paper, we review the recent progress in the resistive random access memory
(ReRAM) technology, one of the most promising emerging nonvolatile memories, in which …
(ReRAM) technology, one of the most promising emerging nonvolatile memories, in which …
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction
This work addresses the set and reset mechanisms in NiO-based resistive-switching
memory (RRAM) devices, presenting a new physics-based model for RRAM reliability and …
memory (RRAM) devices, presenting a new physics-based model for RRAM reliability and …
Novel ultra-low power RRAM with good endurance and retention
We report high performance RRAM of ultra-low 4 μW set power (-3.5 μA at-1.1 V), 16 pW
reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4× 10 …
reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4× 10 …
Electron trapping effect on the switching behavior of contact RRAM devices through random telegraph noise analysis
YH Tseng, WC Shen, CE Huang… - 2010 International …, 2010 - ieeexplore.ieee.org
Single electron trapping/de-trapping behavior is firstly observed and investigated in the
contact resistive random access memory cell. By analyzing the random telegraph noise, the …
contact resistive random access memory cell. By analyzing the random telegraph noise, the …
High endurance performance of 1T1R HfOx based RRAM at low (<20μA) operative current and elevated (150°C) temperature
B Butcher, S Koveshnikov, DC Gilmer… - 2011 IEEE …, 2011 - ieeexplore.ieee.org
Lower operation current and voltage are strongly required for scaled RRAM devices with
high density memory cell arrays. As the lower operation current reduces the size of the …
high density memory cell arrays. As the lower operation current reduces the size of the …
NiO resistance change memory with a novel structure for 3D integration and improved confinement of conduction path
B Lee, HSP Wong - 2009 Symposium on VLSI Technology, 2009 - ieeexplore.ieee.org
Among the candidates for future non-volatile memory, transition metal oxide (TMO)
resistance change random access memory (RRAM) has shown potential for superior …
resistance change random access memory (RRAM) has shown potential for superior …
Design and application of oxide-based resistive switching devices for novel computing architectures
Resistive switching behaviors of oxide-based resistive random access memory (RRAM) and
the applications for the data storage and computing systems have been widely studied. In …
the applications for the data storage and computing systems have been widely studied. In …
[HTML][HTML] Nano-crystallized titanium oxide resistive memory with uniform switching and long endurance
We report a novel resistive random access memory using tri-layer dielectrics of GeO x/nano-
crystal TiO 2/TaON and low cost top Ni and bottom TaN electrodes. Excellent device …
crystal TiO 2/TaON and low cost top Ni and bottom TaN electrodes. Excellent device …
Excellent resistive switching characteristics of Cu doped ZrO2 and its 64 bit cross-point integration
Excellent nonpolar resistive switching behavior is reported in the Cu doped ZrO 2 memory
devices with the sandwiched structure of Cu/ZrO 2: Cu/Pt. The ratio between the high and …
devices with the sandwiched structure of Cu/ZrO 2: Cu/Pt. The ratio between the high and …