Physics and applications of quantum dot lasers for silicon photonics
Photonic integrated circuits (PICs) have enabled numerous high performance, energy
efficient, and compact technologies for optical communications, sensing, and metrology …
efficient, and compact technologies for optical communications, sensing, and metrology …
Intensity noise reduction in quantum dot comb laser by lower external carrier fluctuations
This work investigates the impact of carrier noise induced by an external current source on
the linewidth enhancement factor (LEF) and relative intensity noise (RIN) of a 100 GHz …
the linewidth enhancement factor (LEF) and relative intensity noise (RIN) of a 100 GHz …
[HTML][HTML] Epitaxial quantum dot lasers on silicon with high thermal stability and strong resistance to optical feedback
This work investigates the performance of 1.3-μm quantum dot lasers epitaxially grown on
silicon under optical feedback sensitivity with different temperature and doping profiles …
silicon under optical feedback sensitivity with different temperature and doping profiles …
Effect of excited state lasing on the chaotic dynamics of spin QD-VCSELs
We investigate numerically the chaotic dynamics of optically pumped quantum-dot (QD) spin
vertically coupled surface emitting lasers (VCSELs) accounting for both ground state (GS) …
vertically coupled surface emitting lasers (VCSELs) accounting for both ground state (GS) …
Comparison of optical feedback dynamics of InAs/GaAs quantum-dot lasers emitting solely on ground or excited states
LC Lin, CY Chen, H Huang, D Arsenijević, D Bimberg… - Optics letters, 2018 - opg.optica.org
We experimentally compare the dynamics of InAs/GaAs quantum dot lasers under optical
feedback emitting exclusively on ground states (GSs) or excited states (ESs). By varying the …
feedback emitting exclusively on ground states (GSs) or excited states (ESs). By varying the …
Influence of the linewidth enhancement factor on the signal pattern of Fourier domain mode-locked lasers
Fourier domain mode-locked (FDML) lasers are frequency-swept lasers that operate in the
near-infrared region and allow for the attainment of a large sweep-bandwidth, high sweep …
near-infrared region and allow for the attainment of a large sweep-bandwidth, high sweep …
Multimode optical feedback dynamics in InAs/GaAs quantum dot lasers emitting exclusively on ground or excited states: transition from short-to long-delay regimes
H Huang, LC Lin, CY Chen, D Arsenijević… - Optics …, 2018 - opg.optica.org
The optical feedback dynamics of two multimode InAs/GaAs quantum dot lasers emitting
exclusively on sole ground or excited lasing states is investigated. The transition from long …
exclusively on sole ground or excited lasing states is investigated. The transition from long …
Instability in optical injection locking semiconductors lasers using multiparametric bifurcation analysis
AD Mengue, EJR Olinga, BZ Essimbi - Chaos: An Interdisciplinary …, 2024 - pubs.aip.org
In this paper, we investigate bifurcations of equilibria and transients by using modified rate
equations of semiconductor lasers (SCLs) subjected to optical injection. An analytical study …
equations of semiconductor lasers (SCLs) subjected to optical injection. An analytical study …
[HTML][HTML] Multimode optical feedback dynamics of InAs/GaAs quantum-dot lasers emitting on different lasing states
Quantum dot lasers are envisioned to be the next generation of optical transmitters used for
short-reach communication links, owing to their low threshold current and high temperature …
short-reach communication links, owing to their low threshold current and high temperature …
Dynamics of optically injected semiconductor lasers with zero linewidth enhancement factor
NM Al-Hosiny - Journal of Taibah University for Science, 2023 - Taylor & Francis
The study theoretically investigates the dynamic of an injection-locked semiconductor laser
with zero linewidth enhancement factor. The stability map of the injection locking process is …
with zero linewidth enhancement factor. The stability map of the injection locking process is …