In recent years, non-< 111>-oriented semiconductor nanowires have attracted increasing
interest in terms of fundamental research and promising applications due to their …

Transition metal nitrides (TMNs) are rapidly gaining prominence as attractive supercapacitor
electrode materials due to their intriguing properties. Nevertheless, the quest for facile and …

Abstract Fabricated from ZnO, III-N, chalcogenide-based, III-V, hybrid perovskite or other
materials, semiconductor nanowires offer single-element and array functionality as …

The epitaxial growth of III–V nanowires with excellent optoelectronic properties on low-cost,
light-weight, and flexible substrates is a key step for the design and engineering of future …

The integration of both optical and electronic components on a single chip, despite several
challenges, holds the promise of compatibility with complementary metal-oxide …

Nanostructured materials present improved thermoelectric properties due to non-trivial
effects at the nanoscale. However, the characterization of individual nanostructures …

Nanowire integration into current processing technologies remains an important challenge
regarding scalable device fabrication, particularly for metal-catalyzed III–V nanowires …

Accurate description of solubility and defect ionization energies in low dimensional
nanostructures is critical for electronic applications of semiconductors with improved …

We realized the control on the crystal structure of GaAs nanowires (NWs) by silicon (Si)
doping and V/III ratio. This viewpoint has been clearly evidenced by Raman spectrum …

The monolithic integration of gallium phosphide (GaP), with its green band gap, high
refractive index, large optical non-linearity, and broad transmission range on silicon (Si) …