A general strategy to ultrasensitive Ga2O3 based self-powered solar-blind photodetectors
C Wu, F Wu, C Ma, S Li, A Liu, X Yang, Y Chen… - Materials Today …, 2022 - Elsevier
Ga 2 O 3 based self-powered photodetectors, which can work in photovoltaic mode, show
great potential applications in the next-generation photodetectors. Due to the difficulty of p …
great potential applications in the next-generation photodetectors. Due to the difficulty of p …
Compact and fast response dual-directional SCR for nanoscale ESD protection engineering
Direct bidirectional current discharge paths between input/output (I/O) and ground (GND)
are imperative to achieve robust charged device model (CDM) protection for very stringent …
are imperative to achieve robust charged device model (CDM) protection for very stringent …
Study on Enhancing Electrostatic Discharge Stress Robustness of Flexible Thin-Film Transistors Via Interface Modification
Y Shen, Y Yan, M Zhang, Y Zhou… - … on Electron Devices, 2024 - ieeexplore.ieee.org
Electrostatic discharge (ESD) is one of the common threats to the reliability of electronic
components, and device-level ESD protection is the last line of defense for the stable …
components, and device-level ESD protection is the last line of defense for the stable …
A novel dual-directional DTSCR in twin-well process for ultra-low-voltage ESD protection
By embedding additional NPN-and PNP-type bipolar junction transistors into a diode-
triggered silicon-controlled rectifier (DTSCR) with single-directional ESD protection, we …
triggered silicon-controlled rectifier (DTSCR) with single-directional ESD protection, we …
High Area Efficiency Bidirectional Silicon-Controlled Rectifier for Low-Voltage Electrostatic Discharge Protection
Y Chen, D Zhao, S Zhou, X Zhu, F Gao, Y Yuan, Y Hu… - Electronics, 2023 - mdpi.com
Continuously scaling down and decreasing operation voltages of ICs, from the 5 V TTL-
compatible voltage to 3.3 V, then 1.2 V, and now 0.8 V for low-power ICs, results in more …
compatible voltage to 3.3 V, then 1.2 V, and now 0.8 V for low-power ICs, results in more …
A compact broadband ESD protection circuit using multi‐layer helical inductor
WH Zou, P Tang, ZH Zhu - Electronics Letters, 2021 - Wiley Online Library
Here, a broadband electrostatic discharge (ESD) protection circuit using area‐efficient multi‐
layer helical inductors is presented. The proposed concept was verified in a 0.18 μm 1P6M …
layer helical inductors is presented. The proposed concept was verified in a 0.18 μm 1P6M …
Design of high-reliability LDO regulator incorporated with SCR based ESD protection circuit using transient switch structure
SU Yeol, LJ Min, KS Wook, YS Koo - IEICE Electronics Express, 2024 - jstage.jst.go.jp
Circuit systems operating in low-voltage applications must provide stable output despite
changes in load current. And without IC-level reliability, stable output voltage cannot be …
changes in load current. And without IC-level reliability, stable output voltage cannot be …
Effect of NC pins ESD test on the reliability of integrated circuits with high density BGA package
J Lu, Y Ma, K Zhang, Y Yu, H Zhang - Microelectronics Reliability, 2022 - Elsevier
In this study, the failure phenomenon of high-pin-count BGA device ESD test by stressing
NC pins was tested and analyzed since NC pin withstands HBM pulse as the signal pin …
NC pins was tested and analyzed since NC pin withstands HBM pulse as the signal pin …
Design of a High-ESD-Robustness Multi-point LVDS Interface Using Current Mirror in 3.3-V CMOS Process
L Qian, X Huang, M Li, S Hu - 2022 International EOS/ESD …, 2022 - ieeexplore.ieee.org
Multi-point low voltage differential signaling (MLVDS) interface with optimized ESD
protection is designed and verified in 0.18-μm 3.3-V CMOS technology. Compared with the …
protection is designed and verified in 0.18-μm 3.3-V CMOS technology. Compared with the …
Design and Implementation of a novel high failure current shunt MLSCR
W Liu, H Yang, Y Wang, H Tao… - 2024 3rd International …, 2024 - ieeexplore.ieee.org
The failure current (I t2) in electrostatic discharge (ESD) protection device design indicates
its protective capabilities. The higher the failure current, the greater the anti-static capability …
its protective capabilities. The higher the failure current, the greater the anti-static capability …