Heterostructures construction on TiO2 nanobelts: a powerful tool for building high-performance photocatalysts

X Zhang, Y Wang, B Liu, Y Sang, H Liu - Applied Catalysis B …, 2017 - Elsevier
Semiconductor photocatalysis is a promising approach to combat both environmental
pollution and the global energy shortage. Advanced TiO 2-based photocatalysts with novel …

Efficiency limit of InAs/GaAs quantum dot solar cells attributed to quantum dot size effects

RP Smith, JS Kim, SK Noh, SJ Lee, CL Lee… - Solar Energy Materials …, 2016 - Elsevier
The effects of quantum dot (QD) size on the optical and electrical properties of InAs/GaAs
QD solar cells (QDSCs) were investigated. QDSCs with varying InAs QD size were …

Observation and implications of the Franz‐Keldysh effect in ultrathin GaAs solar cells

M van Eerden, J van Gastel, GJ Bauhuis… - Progress in …, 2020 - Wiley Online Library
Voltage‐dependencies were observed in the external quantum efficiency (EQE) spectra of
ultrathin GaAs solar cells. The subbandgap tail was shown to increase going from forward to …

Phase-sensitive analysis of a two-color infrared photodetector using photoreflectance spectroscopy

B Zeinalvand Farzin, DK Lee, TI Kang, JS Kim… - Journal of Applied …, 2023 - pubs.aip.org
The phase diagrams of photoreflectance spectra were investigated for an InGaAs two-color
infrared photodetector. The diagrams for a high excitation intensity revealed that the …

Fabrication and characterization of InAs/InGaAs sub-monolayer quantum dot solar cell with dot-in-a-well structure

JS Kim, JO Kim, SK Noh, SJ Lee - Current Applied Physics, 2016 - Elsevier
To improve the efficiency of InAs quantum dot solar cells (QDSCs), we propose a QDSC
structure with sub-monolayer (SML) QDs. The optical and electrical properties of Stranski …

Correlation between the time constant of a photoreflectance signal and the quantum efficiency of a pn junction

B Zeinalvand Farzin, DK Lee, GH Kim, J Ha… - Journal of the Korean …, 2023 - Springer
A formulation was derived to connect the time constant of the photoreflectance signal and
the quantum efficiency of ap-n junction. The characteristic time constants were achieved by …

Photoreflectance study on the photovoltaic effect in InAs/GaAs quantum dot solar cell

S Yoon, SH Lee, JC Shin, JS Kim, SJ Lee… - Current Applied …, 2018 - Elsevier
To investigate the effect of quantum dot (QD) layers on the photovoltaic process of
InAs/GaAs QD solar cell (QDSC), QD layers were embedded in conventional GaAs pn …

Highly Strained AlGaAs‐GaAsP Nanomembranes‐Based High‐Performance Diode

HN Abbasi, M Sheikhi, D Kim, R Singh… - Advanced Materials …, 2024 - Wiley Online Library
Nanomembranes (NMs) made from single‐crystalline inorganic semiconductors offer unique
properties, such as flexibility, transparency, and tunable bandgaps, making them suitable for …

Investigation of the electrical and optical properties of InAs/InGaAs dot in a well solar cell

SH Lee, CW Sohn, HJ Jo, JS Kim, SJ Lee, SK Noh… - Current Applied …, 2015 - Elsevier
The electroreflectance (ER) and current–voltage (J–V) of InAs/InGaAs dots in a well
(DWELL) solar cell (SC) were measured to examine the optical and electrical properties. To …

Temperature-dependent direct transition energy in Ge0. 99Sn0. 01 film grown on Si measured by photoreflectance spectroscopy

HJ Jo, MG So, JS Kim, MY Ryu, YK Yeo, J Kouvetakis - Thin Solid Films, 2015 - Elsevier
Highlights•Carried out photoreflectance study of p-type Ge 0.99 Sn 0.01 film grown on Si
substrate•Observed two direct transitions from Γ valley to valence and spin-orbit split-off …