Investigation of electronic structure, optical properties, map of electrostatic potential, and toxicity of Hfo2, Hf0. 88si0. 12o2, Hf0. 88Ge0. 12o2 and Hf0. 88Sn0. 12O2 by …
This research work presents a computational investigation of hafnium (IV) oxide and its
crystals doped by Si, Ge and Sn atoms, replacing the oxygen atom in HfO2. Hafnium (IV) …
crystals doped by Si, Ge and Sn atoms, replacing the oxygen atom in HfO2. Hafnium (IV) …
Formation of cerium oxide film via post-sputter oxidation of cerium in nitrogen/oxygen/nitrogen ambient
ARM Zabidi, WF Lim - Journal of Alloys and Compounds, 2021 - Elsevier
Bulk cerium film deposited on silicon was transformed into cerium oxide (CeO 2) by post-
sputter oxidation at 400, 600, 800, and 1000° C in nitrogen/oxygen/nitrogen ambient. The …
sputter oxidation at 400, 600, 800, and 1000° C in nitrogen/oxygen/nitrogen ambient. The …
Growth of metal‐organic decomposed ternary GaxCeyOz films by nitrogen‐infused wet oxidation for metal‐oxide‐semiconductor capacitor
KY Tan, HJ Quah - International Journal of Energy Research, 2022 - Wiley Online Library
Nitrogen‐infused wet oxidation process was carried out for 30 min at dissimilar temperatures
(400° C, 600° C, 800° C, and 1000° C) onto GaxCeyOz films deposited on Si substrate …
(400° C, 600° C, 800° C, and 1000° C) onto GaxCeyOz films deposited on Si substrate …
Wet oxidation growth of hafnium doped tantalum oxide films with different composition deposited on silicon substrate
Abstract As-deposited Ta-HfO 2 films produced via co-sputtering using different Ta
sputtering powers (120, 150, and 180 W) with a fixed HfO 2 power (160 W) were transformed …
sputtering powers (120, 150, and 180 W) with a fixed HfO 2 power (160 W) were transformed …
Impact of varying wet oxidation temperature in the presence of nitrogen flow on hafnium tantalum oxide films
Wet oxidation has been undergone at dissimilar temperatures from 400 until 1000° C for
deposition of high dielectric constant ternary hafnium tantalum oxide films on silicon (Si) …
deposition of high dielectric constant ternary hafnium tantalum oxide films on silicon (Si) …
Exploratory studies on wet oxidation grown ternary hafnium tantalum oxide for metal‐oxide semiconductor application
Ternary hafnium‐doped tantalum oxide (HfxTayOz) films were successfully obtained after
wet oxidation at different temperatures (400‐1000° C). A phase transformation from …
wet oxidation at different temperatures (400‐1000° C). A phase transformation from …
Electron mobility modeling in strained-Si n-MOSFETs using TCAD
To continue with the trend of Moore's law, the use of conventional Si-MOSFETs can be
replaced with high mobility channel MOSFETs. Among the high mobility channels, strained …
replaced with high mobility channel MOSFETs. Among the high mobility channels, strained …
Dual-step grown ternary aluminium zirconium oxide and its characteristics for metal-oxide-semiconductor capacitor
Abstract Ternary Al x Zr y O z films were successfully grown on Si substrate via a dual-step
growth technique, which was referred to as a co-sputtering process followed by an oxidation …
growth technique, which was referred to as a co-sputtering process followed by an oxidation …
Enhanced room temperature sensitivity of undoped HfO2 nanoparticles towards formaldehyde gas
A Chattopadhyay, J Nayak - Applied Physics A, 2021 - Springer
Hafnium oxide (HfO2) nanoparticulate powders were synthesized via a single step sol gel
route using citric acid and ethylene glycol as chelating agent and polymerizing agent …
route using citric acid and ethylene glycol as chelating agent and polymerizing agent …
Growth and Characterization of Ternary HfxTayOz Films via Nitrogen-Infused Wet Oxidation
Nitrogen-infused wet oxidation at different temperatures (400–1000° C) was employed to
transform tantalum–hafnia to hafnium-doped tantalum oxide films. High-temperature wet …
transform tantalum–hafnia to hafnium-doped tantalum oxide films. High-temperature wet …