Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …

We review the Raman thermography technique, which has been developed to determine the
temperature in and around the active area of semiconductor devices with submicron spatial …

Degradation mechanisms limiting the electrical reliability of GaN high-electron-mobility
transistors (HEMTs) are generally attributed to defect generation by hot-electrons but …

Highly insulating layers are a prerequisite for gallium nitride (GaN)‐based power electronic
devices. For this purpose, carbon doping is one of the currently pursued approaches …

Depth-resolved cathodoluminescence spectroscopy (DRCLS) has developed over the past
few decades into a powerful technique for characterizing electronic properties of advanced …

We investigate the accuracy and reliability of temperature mapping using scanning thermal
microscopy (SThM) in contact and PeakForce tapping mode on the example of a GaN-on …

It has long been known that GaN high-electron-mobility transistors can degrade significantly
under hot electron stress. More recently, an increase in the yellow luminescence was …

Damage and microstructure evolution in gallium nitride (GaN) under Au+ ion irradiation has
been investigated using complementary electron microscopy, secondary ion mass …

Degradation of electronic devices by hot electrons is universally attributed to the generation
of defects, but the mechanisms for defect generation and the specific nature of the pertinent …

Non-uniform self-heating and temperature hotspots are major concerns compromising the
performance and reliability of submicron electronic and optoelectronic devices. At deep …