While the (001) oriented substrate of compound semiconductors are most commonly used in
fabrication of wireless and opto-electronic devices by molecular beam epitaxy, metallorganic …

The principal reconstructions found on the low-index planes of GaAs and ZnSe can be
explained in terms of a simple electron counting model. A surface structure satisfies this …

Reflection high-energy electron diffraction (RHEED) is the analytical tool of choice for
characterizing thin films during growth by molecular beam epitaxy, since it is very sensitive …

We consider the possibility that monoatomic terrace edges undergo a morphological
instability during epitaxial Istep-flowR growth. A linear stability analysis predicts that such an …

Detailed surface phase diagrams of GaAs (001) and AlxGa1− xAs (001) have been
determined in a study of MBE growth on vicinal surfaces. Information on the defect structure …

Recent progress in computational materials science in the area of semiconductor materials
is reviewed. Reliable predictions can now be made for a wide range of problems, such as …

This exciting new handbook investigates the characterization of surfaces. It emphasizes
experimental techniques for imaging of solid surfaces and theoretical strategies for …

The growth mechanism of GaAs and AlGaAs in migration-enhanced epitaxy is investigated
by RHEED observation and optical scattering measurements. The available Ga site density …

The misorientation direction dependence of the transition from growth by the formation and
coalescence of two-dimensional clusters to growth by step advancement has been …

We report the first scanning tunneling microscope observations of molecular beam epitaxy
grown GaAs (001) vicinal surfaces cut 2° towards (111) A and 2° towards (111) B. The A …