Atomic layer etching (ALE) is a technique for removing thin layers of material using
sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for …

The ability to achieve near-atomic precision in etching different materials when transferring
lithographically defined templates is a requirement of increasing importance for nanoscale …

The atomic layer etching (ALE) of Al2O3 was demonstrated using sequential, self-limiting
thermal reactions with tin (II) acetylacetonate (Sn (acac) 2) and hydrogen fluoride (HF) as the …

Current trends in semiconductor device manufacturing impose extremely stringent
requirements on nanoscale processing techniques, both in terms of accurately controlling …

Thermal atomic layer etching (ALE) of silicon was performed using O2, HF, and Al (CH3) 3
as the reactants at temperatures from 225 to 290° C. This thermal etching process is based …

Thermal atomic layer etching (ALE) of silicon nitride was achieved using sequential
exposures of oxygen (O 2) or ozone (O 3), hydrofluoric acid (HF), and trimethylaluminum …

These days, the process of plasma etching is exhibited in various forms, including the
reactive ion etching (RIE) method. Not only memory device but also computing element such …

The atomic layer etching (ALEt) of HfO 2 was performed using sequential, self-limiting
thermal reactions with tin (II) acetylacetonate (Sn (acac) 2) and HF as the reactants. The HF …

Thermal Al2O3 atomic layer etching (ALE) can be performed using sequential, self-limiting
reactions with tin (II) acetylacetonate (Sn (acac) 2) and HF as the reactants. To understand …

Thermal atomic layer etching (ALE) can be accomplished using sequential fluorination and
ligandexchange reactions. HF has been a typical fluorination reactant. Various metal …