Epitaxial van der Waals contacts for low schottky barrier MoS2 field effect transistors
Small contact resistance and low Schottky barrier height (SBH) are the keys to energy-
efficient electronics and optoelectronics. Two-dimensional (2D) semiconductors-based field …
efficient electronics and optoelectronics. Two-dimensional (2D) semiconductors-based field …
Thermally activated hysteresis in high quality graphene/h-BN devices
AR Cadore, E Mania, K Watanabe, T Taniguchi… - Applied Physics …, 2016 - pubs.aip.org
We report on gate hysteresis of resistance in high quality graphene/hexagonal boron nitride
(h-BN) devices. We observe a thermally activated hysteretic behavior in resistance as a …
(h-BN) devices. We observe a thermally activated hysteretic behavior in resistance as a …
[HTML][HTML] The two timescales in the charge trapping mechanism for the hysteresis behavior in graphene field effect transistors
D Mao, S Wang, S Peng, D Zhang, J Shi… - Journal of Materials …, 2016 - Springer
To understand the hysteresis phenomenon in the transfer characteristic curve of graphene
field effect transistor is crucial to develop new graphene based sensors and memory …
field effect transistor is crucial to develop new graphene based sensors and memory …
[PDF][PDF] Benchmarking and Chemical Doping Techniques for Nanoscale Graphene Interconnects
KA Brenner - 2013 - researchgate.net
Since the first introduction of an integrated circuit (IC), scaling has defined the success that
the microelectronics, and now nanoelectronics, industry has enjoyed. It is this very scaling …
the microelectronics, and now nanoelectronics, industry has enjoyed. It is this very scaling …