Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …

Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications

X Hou, Y Zou, M Ding, Y Qin, Z Zhang… - Journal of Physics D …, 2020 - iopscience.iop.org
Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due
to its critical applications, especially in safety and space detection. A DUV photodetector …

High‐Performance Harsh‐Environment‐Resistant GaOX Solar‐Blind Photodetectors via Defect and Doping Engineering

X Hou, X Zhao, Y Zhang, Z Zhang, Y Liu… - Advanced …, 2022 - Wiley Online Library
Abstract Gallium oxide (Ga2O3), with an ultrawide bandgap, is currently regarded as one of
the most promising materials for solar‐blind photodetectors (SBPDs), which are greatly …

Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging

Y Qin, LH Li, Z Yu, F Wu, D Dong, W Guo… - Advanced …, 2021 - Wiley Online Library
The growing demand for scalable solar‐blind image sensors with remarkable photosensitive
properties has stimulated the research on more advanced solar‐blind photodetector (SBPD) …

Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga2O3-Based Heterojunction

Y Wang, H Li, J Cao, J Shen, Q Zhang, Y Yang… - ACS …, 2021 - ACS Publications
Solar blind photodetectors with a cutoff wavelength within the 200–280 nm region is
attracting much attention due to their potential civilian and military applications. The …

Pt/AlGaN nanoarchitecture: toward high responsivity, self-powered ultraviolet-sensitive photodetection

D Wang, X Liu, S Fang, C Huang, Y Kang, H Yu… - Nano Letters, 2020 - ACS Publications
Energy-saving photodetectors are the key components in future photonic systems.
Particularly, self-powered photoelectrochemical-type photodetectors (PEC–PDs), which …

Current advances in solar-blind photodetection technology: Using Ga 2 O 3 and AlGaN

U Varshney, N Aggarwal, G Gupta - Journal of Materials Chemistry C, 2022 - pubs.rsc.org
The rapid spread of the novel coronavirus disease (COVID-19) and emergence of different
variants worldwide have caused a pandemic. With the sudden outbreak of this virus …

Over 5 × 103-Fold Enhancement of Responsivity in Ga2O3-Based Solar Blind Photodetector via Acousto–Photoelectric Coupling

Q Zhang, D Dong, T Zhang, T Zhou, Y Yang, Y Tang… - ACS …, 2023 - ACS Publications
The emergence of the wide-band-gap semiconductor Ga2O3 has propelled it to the forefront
of solar blind detection activity owing to its key features. Although various architectures and …

Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review

BR Tak, S Kumar, AK Kapoor, D Wang… - Journal of Physics D …, 2021 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3) is rapidly emerging as a material of choice for the
development of solar blind photodetectors and power electronic devices which are …

[HTML][HTML] Toward emerging gallium oxide semiconductors: A roadmap

Y Yuan, W Hao, W Mu, Z Wang, X Chen, Q Liu… - Fundamental …, 2021 - Elsevier
Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …