Hybrid spintronic materials: Growth, structure and properties

W Liu, PKJ Wong, Y Xu - Progress in Materials Science, 2019 - Elsevier
Spintronics is an emergent interdisciplinary topic for the studies of spin-based, other than or
in addition to charge-only-based physical phenomena. Since the discovery of giant …

Heterostructures of graphene and hBN: Electronic, spin-orbit, and spin relaxation properties from first principles

K Zollner, M Gmitra, J Fabian - Physical Review B, 2019 - APS
We perform extensive first-principles calculations for heterostructures composed of
monolayer graphene and hexagonal boron nitride (hBN). Employing a symmetry-derived …

Large room temperature spin-to-charge conversion signals in a few-layer graphene/Pt lateral heterostructure

W Yan, E Sagasta, M Ribeiro, Y Niimi, LE Hueso… - Nature …, 2017 - nature.com
Electrical generation and detection of pure spin currents without the need of magnetic
materials are key elements for the realization of full electrically controlled spintronic devices …

Graphene on two-dimensional hexagonal BN, AlN, and GaN: Electronic, spin-orbit, and spin relaxation properties

K Zollner, AW Cummings, S Roche, J Fabian - Physical Review B, 2021 - APS
We investigate the electronic band structure of graphene on a series of two-dimensional
hexagonal nitride insulators h XN, X= B, Al, and Ga, with first-principles calculations. A …

Current-limiting challenges for all-spin logic devices

L Su, Y Zhang, JO Klein, Y Zhang, A Bournel, A Fert… - Scientific reports, 2015 - nature.com
All-spin logic device (ASLD) has attracted increasing interests as one of the most promising
post-CMOS device candidates, thanks to its low power, non-volatility and logic-in-memory …

High spin current density in gate-tunable spin-valves based on graphene nanoribbons

CP Wang, SH Cheng, WJ Hsueh - Scientific Reports, 2023 - nature.com
The usage of two-dimensional (2D) materials will be very advantageous for many
developing spintronic device designs, providing a superior method of managing spin. Non …

Contact-induced spin relaxation in graphene nonlocal spin valves

G Stecklein, PA Crowell, J Li, Y Anugrah, Q Su… - Physical Review …, 2016 - APS
We report on a systematic study of contact-induced spin relaxation in gated graphene
nonlocal spin valves. We demonstrate the enhancement of the nonlocal magnetoresistance …

Strontium oxide tunnel barriers for high quality spin transport and large spin accumulation in graphene

S Singh, J Katoch, T Zhu, RJ Wu, AS Ahmed… - Nano …, 2017 - ACS Publications
The quality of the tunnel barrier at the ferromagnet/graphene interface plays a pivotal role in
graphene spin valves by circumventing the impedance mismatch problem, decreasing …

Experimental observation of coupled valley and spin Hall effect in p‐doped WSe2 devices

TYT Hung, A Rustagi, S Zhang, P Upadhyaya, Z Chen - InfoMat, 2020 - Wiley Online Library
It is generally accepted that perpendicular magnetic anisotropy (PMA) magnets are
preferred over in‐plane magnetic anisotropy (IMA) magnets in data storage applications …

Proposal for a graphene-based all-spin logic gate

L Su, W Zhao, Y Zhang, D Querlioz, Y Zhang… - Applied Physics …, 2015 - pubs.aip.org
In this work, we present a graphene-based all-spin logic gate (G-ASLG) that integrates the
functionalities of perpendicular anisotropy magnetic tunnel junctions (p-MTJs) with spin …