Chemical approaches for electronic doping in photovoltaic materials beyond crystalline silicon
X Wei, P Zhang, T Xu, H Zhou, Y Bai… - Chemical Society …, 2022 - pubs.rsc.org
Electronic doping is applied to tailor the electrical and optoelectronic properties of
semiconductors, which have been widely adopted in information and clean energy …
semiconductors, which have been widely adopted in information and clean energy …
Electrically‐Driven Light Source Embedded in a GaP Nanowaveguide for Visible‐Range Photonics on Chip
DV Lebedev, NA Solomonov… - Advanced Optical …, 2024 - Wiley Online Library
The key components of photonic integrated circuits are nanoscale optica emitters and
nanowaveguides. III‐V semiconductor nanostructures are considered as the most promising …
nanowaveguides. III‐V semiconductor nanostructures are considered as the most promising …
A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM
We report the first study on doping assessment in Te-doped GaAsSb nanowires (NWs) with
variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron …
variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron …
Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications
P Paramasivam, N Gowthaman, VM Srivastava - Nanomaterials, 2023 - mdpi.com
This research work uses sp3d5s* tight-binding models to design and analyze the structural
properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide …
properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide …
Thermal conductivity of GaAs nanowire arrays measured by the 3ω method
Vertical nanowire (NW) arrays are the basis for a variety of nanoscale devices.
Understanding heat transport in these devices is an important concern, especially for …
Understanding heat transport in these devices is an important concern, especially for …
Large Tolerance of Lasing Properties to Impurity Defects in GaAs (Sb)‐AlGaAs Core‐Shell Nanowire Lasers
T Schreitmüller, HW Jeong… - Advanced Functional …, 2024 - Wiley Online Library
GaAs‐AlGaAs based nanowire (NW) lasers hold great potential for on‐chip photonic
applications, where lasing metrics have steadily improved over the years by optimizing …
applications, where lasing metrics have steadily improved over the years by optimizing …
P–n junctions in planar GaAs nanowires
Control over the doping at the nanoscale during the growth of nanostructures is one of the
key challenges of device fabrication. In this work we study p (Zn)-and n (Sn)-doping …
key challenges of device fabrication. In this work we study p (Zn)-and n (Sn)-doping …
A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector
This work reports a comprehensive investigation of the effect of gallium telluride (GaTe) cell
temperature variation (T GaTe) on the morphological, optical, and electrical properties of …
temperature variation (T GaTe) on the morphological, optical, and electrical properties of …
Si doping-induced phase control, formation of p-type and n-type GaAs nanowires
Y Kang, J Tang, F Azad, X Zhu, X Chen, X Chu… - Vacuum, 2022 - Elsevier
We realized the control on the crystal structure of GaAs nanowires (NWs) by silicon (Si)
doping and V/III ratio. This viewpoint has been clearly evidenced by Raman spectrum …
doping and V/III ratio. This viewpoint has been clearly evidenced by Raman spectrum …
Ultrathin Te-Doped GaP Nanoantenna with Crystal Phase Transitions
E Diak, A Thomas, VG Dubrovskii… - Crystal Growth & …, 2023 - ACS Publications
We report Te-doped GaP nanowires (NWs) with positive tapering and radii measuring as
low as 5 nm grown by the self-assisted vapor–liquid–solid mechanism using selective-area …
low as 5 nm grown by the self-assisted vapor–liquid–solid mechanism using selective-area …