[HTML][HTML] Towards Efficient Memory Architectures: Low-Power Noise-Immune RRAM
NM Edward, SM Hamed, WR Anis, N Elaraby - Energies, 2024 - mdpi.com
The performance of Static Nanomaterials Random-Access Memories (SRAMs) is often
degraded in the sub-threshold region as it is susceptible to increased access energy and …
degraded in the sub-threshold region as it is susceptible to increased access energy and …
[PDF][PDF] 两种面向宇航应用的高可靠性抗辐射加固技术静态随机存储器单元
闫爱斌， 李坤， 黄正峰， 倪天明， 徐辉 - 电子与信息学报, 2024 - jeit.ac.cn
CMOS 尺寸的大幅缩小引发电路可靠性问题. 该文介绍了两种高可靠的基于设计的抗辐射加固(
RHBD) 10T 和12T 抗辐射加固技术(SRAM) 单元, 它们可以防护单节点翻转(SNU) …
RHBD) 10T 和12T 抗辐射加固技术(SRAM) 单元, 它们可以防护单节点翻转(SNU) …
Performance Evaluation of 9T and 6T SRAM Cells at 7nm Technology
M Abhiram, BMM Tripathi - 2023 14th International Conference …, 2023 - ieeexplore.ieee.org
Performing an investigation on the power consumption and delay parameters of 6T and 9T
SRAM cells, respectively. Memory power consumption is a crucial design aspect because of …
SRAM cells, respectively. Memory power consumption is a crucial design aspect because of …
Comparison between Power Dissipation and Propagation Delay on 6T SRAM Cell Design Using GDI Logic with Transmission Gate VMSA and Voltage Divider
R Aditya, RK Harahap - Kinetik: Game Technology, Information …, 2024 - kinetik.umm.ac.id
The rapid evolution of the semiconductor industry has witnessed shrinking portable and
mobile devices alongside an increasing demand for extended battery life. Addressing the …
mobile devices alongside an increasing demand for extended battery life. Addressing the …
Two Highly Reliable Radiation Hardened By Design Static Random Access Memory Cells for Aerospace Applications
A YAN, K LI, Z HUANG, T NI, H XU - 电子与信息学报, 2024 - jeit.ac.cn
Aggressive scaling of CMOS technologies can cause the reliability issues of circuits. Two
highly reliable Radiation Hardened By Design (RHBD) 10T and 12T Static Random-Access …
highly reliable Radiation Hardened By Design (RHBD) 10T and 12T Static Random-Access …
Design and Analysis of Low Power CMOS SRAM Cells 7T and 9T
V Choudhary, DS Yadav - 2022 10th International Conference …, 2022 - ieeexplore.ieee.org
7T and 9T SRAM cells are compared by the software Cadence Virtuoso tool using 180nm
technology. Designing a memory of low power consumption is a challenging concept in the …
technology. Designing a memory of low power consumption is a challenging concept in the …