Heterogeneous wafer bonding technology and thin-film transfer technology-enabling platform for the next generation applications beyond 5G
Wafer bonding technology is one of the most effective methods for high-quality thin-film
transfer onto different substrates combined with ion implantation processes, laser irradiation …
transfer onto different substrates combined with ion implantation processes, laser irradiation …
Beyond Moore's law–A critical review of advancements in negative capacitance field effect transistors: A revolution in next-generation electronics
Conventional FETs, although serving as the backbone of modern electronics, have
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …
Negative capacitance transistors
JC Wong, S Salahuddin - Proceedings of the IEEE, 2018 - ieeexplore.ieee.org
In recent years, the negative capacitance effect in ferroelectric (FE) materials has attracted
significant attention from many researchers around the world. The negative capacitance …
significant attention from many researchers around the world. The negative capacitance …
Negative differential resistance in negative capacitance FETs
We report the investigation of negative differential resistance (NDR) in negative capacitance
(NC) germanium (Ge) pFETs. The NDR in NC transistors is attributed to the coupling of drain …
(NC) germanium (Ge) pFETs. The NDR in NC transistors is attributed to the coupling of drain …
Analysis of DIBL effect and negative resistance performance for NCFET based on a compact SPICE model
In this paper, we describe an improved SPICE model for the negative capacitance field-
effect transistor (NCFET). According to the law of conservation of charge, the model is built …
effect transistor (NCFET). According to the law of conservation of charge, the model is built …
Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure
Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory
technology due to its promising operating speed and endurance. However, flipping the …
technology due to its promising operating speed and endurance. However, flipping the …
Influence of body effect on sample-and-hold circuit design using negative capacitance FET
Negative capacitance FET (NCFET) has become a research topic of interest in recent years
due to its interesting properties. It has the ability to retain the polarization state even in the …
due to its interesting properties. It has the ability to retain the polarization state even in the …
Experimental validation of depolarization field produced voltage gains in negative capacitance field-effect transistors
For the first time, this study experimentally validates that the depolarization field (E DE) in the
ferroelectric (FE) film leads to voltage gains in negative capacitance (NC) field-effect …
ferroelectric (FE) film leads to voltage gains in negative capacitance (NC) field-effect …
[HTML][HTML] Ferroelectric devices for intelligent computing
Recently, transistor scaling is approaching its physical limit, hindering the further
development of the computing capability. In the post-Moore era, emerging logic and storage …
development of the computing capability. In the post-Moore era, emerging logic and storage …
Exploration and device optimization of dielectric–ferroelectric sidewall spacer in negative capacitance FinFET
V Chauhan, DP Samajdar… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Gate sidewall spacers, a pathway to the fringing fields, play a crucial role in the device
design. In this article, using well-calibrated TCAD models, we have explored the impact of a …
design. In this article, using well-calibrated TCAD models, we have explored the impact of a …