Wide band gap devices and their application in power electronics

A Kumar, M Moradpour, M Losito, WT Franke… - Energies, 2022 - mdpi.com
Power electronic systems have a great impact on modern society. Their applications target a
more sustainable future by minimizing the negative impacts of industrialization on the …

Analysis and parameter design of SiC-based current source inverter (CSI)

X Yang, Z Zhao, C Wang, J Xu, K Liu, J Qiu - World Electric Vehicle …, 2022 - mdpi.com
Current source inverters (CSIs) use inductors as the major component to store energy.
Compared with voltage source inverters (VSIs), CSIs have two advantages: 1. They can …

An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMT

EA Bottaro, SA Rizzo - Energies, 2023 - mdpi.com
GaN high electron mobility transistors (HEMTs) represent an emerging and key enabling
technology for obtaining highly efficient and compact power electronic systems. The use of …

Assessment of E-mode GaN technology, practical power loss, and efficiency modelling of iL2C resonant DC-DC converter for xEV charging applications

RP Narasipuram, S Mopidevi - Journal of Energy Storage, 2024 - Elsevier
In recent times the demand for xEV's is increasing rapidly and there is need for optimized
technology, one of the key concerns of vehicle manufacturers are efficient high power …

Plasma-assisted halide vapor phase epitaxy for low temperature growth of III-nitrides

G Pozina, CW Hsu, N Abrikossova, C Hemmingsson - Crystals, 2023 - mdpi.com
Developing growth techniques for the manufacture of wide band gap III-nitrides
semiconductors is important for the further improvement of optoelectronic applications. A …

Analysis of Scalable Resonant DC–DC Converter Using GaN Switches for xEV Charging Stations

RP Narasipuram, S Mopidevi, A Dianov… - World Electric Vehicle …, 2024 - mdpi.com
In this research, an innovative electric vehicle (EV) charger is designed and presented for
xEV charging stations. The key feature of our system is a scalable, interleaved inductor …

A Hybrid GaN HEMT Model Merging Artificial Neural Networks and ASM-HEMT for Parameter Precision and Scalability

Z Lu, H Li, H Xie, Y Zhuang, W Wensong… - … on Electron Devices, 2024 - ieeexplore.ieee.org
An innovative hybrid physical model for gallium nitride high-electron-mobility transistors
(GaN HEMTs) that leverages an artificial neural network (ANN) approach is proposed. This …

Circuit-Specific and Technology-Independent Criterion for Selection of Power MOSFETs that Minimize Energy Dissipation

V Joshi, U Jadli, P Pande, M Chaturvedi… - IEEE …, 2023 - ieeexplore.ieee.org
We investigate the impact of power MOSFET channel width on the power efficiency of a
switch-mode power supply. With this analysis, we derive a circuit-specific criterion that …

The Modeling of GaN-FET Power Devices in SPICE

J Zarębski, D Bisewski - Energies, 2023 - mdpi.com
This paper focuses on the problem of the modeling of FET power transistors made of gallium
nitride offered by GaN Systems, Transphorm, and Nexperia. The considered devices have …

[PDF][PDF] Wide Band Gap Devices and Their Application in Power Electronics. Energies 2022, 15, 9172

A Kumar, M Moradpour, M Losito, WT Franke… - 2022 - researchgate.net
Power electronic systems have a great impact on modern society. Their applications target a
more sustainable future by minimizing the negative impacts of industrialization on the …