Deep sub-micron memory devices play a crucial role in space electronic applications due to
their susceptibility to single-event upset and double-node upset types of soft errors. When a …

This paper proposed a radiation-hardened memory cell (RHMC12T) by polar design for
space applications. The proposed cell has the following advantages:(1) it can tolerate all …

This paper proposes a highly robust 16 transistor soft-error resilient SRAM cell (SERSC-
16T) to provide complete resilience to single event upsets (SEU). The proposed cell is …

As transistor feature size is scaling down, the probability of charge sharing in a space‐
radiation environment increases because of the reduced distance between adjacent …

The SRAM is mainstay in on-chip memories due to easier integration with standard
processing technology and high performance. The SRAM cell is required to have the …

Static random access memory (SRAM) is a critical cell of VLSI, which is sensitive to the
charge generated by high-energy particles and susceptible to logical errors. In this paper …

Extremely energetic particles prevalent in the nuclear environment make memory cells
prone to soft errors. Also, attackers extract secret data of SRAM cells via side-channel …

This work proposes a high-performance 16-transistor radiation-hardened SRAM cell
(HP16T), which recovers from all single event upsets and from the internal node pair …

Abstract Random Access Memory (RAM) refers to the main memory of a computer. For the
central processor unit (CPU) to operate quickly and effectively, it stores operating system …

As transistors shrink in size, the integration density of memory circuits like Static Random
Access Memory (SRAM) cells rises, making them increasingly susceptible to Single Event …