The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC)
mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium …

Recent advancements in silicon carbide (SiC) power semiconductor technology enable
developments in the high-power sector, eg, high-voltage-direct-current (HVdc) converters for …

This paper analyzes the switching performance of the full SiC half-bridge power module
BSM120D12P2C005 from Rohm Semiconductor. It investigates if the combination of a DC …

Silicon carbide (SiC) metal–oxide–semiconductor field‐effect transistor (MOSFET) is
regarded as an attractive replacement for Si insulated gate bipolar transistor (IGBT) in high …

This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT
modules for motor drive applications. Both the modules have same packaging and voltage …

In this paper, a comparative performance evaluation of a 1.2 kV SiC MOSFET module and a
1.2 kV Si IGBT module is carried out under a series of different conditions such as similar …

This paper explains the importance of low inductive busbar for utilizing the fast switching
feature of SiC modules. A 3D FEM model of the busbar is built using Ansys Q3D extractor …

Targeting the development of a silicon carbide (SiC) inverter for electric vehicle/hybrid
electric vehicle (EV/HEV) applications, the design considerations of the gate driver for the …

This study aims to explore the solder fatigue lifetime of a developed high-voltage (1.7 kV/100
A) SiC power MOSFET module for on-board chargers (OBCs) subjected to power cycling …

In this paper, the switching performances of two state-of-the-art half-bridge SiC MOSFET
modules are evaluated using a standard double pulse test methodology. The selected …