Low-Dimensional In2Se3 Compounds: From Material Preparations to Device Applications

J Li, H Li, X Niu, Z Wang - ACS nano, 2021 - ACS Publications
Nanostructured In2Se3 compounds have been widely used in electronics, optoelectronics,
and thermoelectrics. Recently, the revelation of ferroelectricity in low-dimensional (low-D) …

2D materials based on main group element compounds: phases, synthesis, characterization, and applications

Z Lu, GP Neupane, G Jia, H Zhao, D Qi… - Advanced Functional …, 2020 - Wiley Online Library
Abstract 2D materials based on main group element compounds have recently attracted
significant attention because of their rich stoichiometric ratios and structure motifs. This …

Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In 2 Se 3 thin layers

S Wan, Y Li, W Li, X Mao, W Zhu, H Zeng - Nanoscale, 2018 - pubs.rsc.org
Nanoscale room-temperature ferroelectricity is ideal for developing advanced non-volatile
high-density memories. However, reaching the thin film limit in conventional ferroelectrics is …

Structural phase transitions between layered indium selenide for integrated photonic memory

T Li, Y Wang, W Li, D Mao, CJ Benmore… - Advanced …, 2022 - Wiley Online Library
The primary mechanism of optical memoristive devices relies on phase transitions between
amorphous and crystalline states. The slow or energy‐hungry amorphous–crystalline …

Ferroelectricity and phase transitions in In 2 Se 3 van der Waals material

M Soleimani, M Pourfath - Nanoscale, 2020 - pubs.rsc.org
van der Waals layered α-In2Se3 has shown out-of-plane ferroelectricity down to the bilayer
and monolayer thicknesses at room temperature that can be switched by an applied electric …

Understanding microscopic operating mechanisms of a van der Waals planar ferroelectric memristor

M Gabel, Y Gu - Advanced Functional Materials, 2021 - Wiley Online Library
Ferroelectric memristors represent a promising new generation of devices that have a wide
range of applications in memory, digital information processing, and neuromorphic …

Large disparity between optical and fundamental band gaps in layered

W Li, FP Sabino, F Crasto de Lima, T Wang, RH Miwa… - Physical Review B, 2018 - APS
In 2 Se 3 is a semiconductor material that can be stabilized in different crystal structures (at
least one 3D and several 2D layered structures have been reported) with diverse electrical …

Wafer‐Scale Fabrication of 2D β‐In2Se3 Photodetectors

MS Claro, J Grzonka, N Nicoara… - Advanced Optical …, 2021 - Wiley Online Library
Abstract 2D materials are considered the future of electronics and photonics, stimulated by
their remarkable performance. Among the 2D materials family, β‐In2Se3 shows good …

Novel type of synaptic transistors based on a ferroelectric semiconductor channel

B Tang, S Hussain, R Xu, Z Cheng… - ACS applied materials …, 2020 - ACS Publications
Three-terminal synaptic transistors are basic units of neuromorphic computing chips, which
may overcome the bottleneck of conventional von Neumann computing. So far, most of the …

UV-SWIR broad range photodetectors made from few-layer α-In 2 Se 3 nanosheets

B Tang, L Hou, M Sun, F Lv, J Liao, W Ji, Q Chen - Nanoscale, 2019 - pubs.rsc.org
Photodetectors are very important for many applications. However, inexpensive infrared
photodetectors with high performance at room temperature are still rare. Furthermore, it is …