The pnp bipolar junction transistors (BJTs) are susceptible to surface recombination in both
the emitter-base depletion and neutral base (NB) regions when their passivation oxide …

This work analytically models the crucial physical mechanisms accountable for the defect
kinetics and the degradation of base current in PNP BJTs. Both the space charge and …

The mymargin metal–oxide–semiconductor mymargin (MOS)-controlled thyristor (MCT) has
been characterized by MOS gating, high current rise rate, and high blocking capabilities …

The insulated-gate bipolar transistor (IGBT) is characterized by metal-oxide-silicon (MOS)-
gating, high current density, and high blocking capabilities. The trench field-stop reverse …

The power relay assembly (PRA) is an essential component to ensure the safety of an
electric vehicle. We propose a semiconductor‐based precharge switch to overcome the …

The MOS-controlled Thyristor (MCT) has been characterized by MOS-gating, high current
rise rate, and high blocking capability. The anode short MCT (AS-MCT) is distinguished from …

In this work, the fast neutron irradiation effects on high-di/dt switching characteristics of IGTT
is demonstrated and investigated by experiments and TCAD simulations. Experimental …

This work focuses on the recombination-enhanced reactions of boron related defects in
compensated silicon and their impact on the electrical performance of silicon devices. Using …

The anode-short metal–oxide–silicon (MOS)-controlled thyristor (AS-MCT) is the latest
generation of MCT. Due to its MOS gating, high-current-rise rate, normally-OFF, and high …

The MOS-controlled Thyristor (MCT) has been characterized by MOS-gating, high current
rise rate, and high blocking capabilities. The anode short MCT (AS-MCT) is distinguished …