A review on the artificial neural network applications for small‐signal modeling of microwave FETs
The purpose of this paper is to provide a comprehensive overview of the field‐effect
transistor (FET) small‐signal modeling using artificial neural networks (ANNs). To gain an in …
transistor (FET) small‐signal modeling using artificial neural networks (ANNs). To gain an in …
An MMIC LNA for millimeter-wave radar and 5G applications with GaN-on-SiC technology
C Huang, Z Zhang, X Wang, H Liu, G Zhang - Sensors, 2023 - mdpi.com
This paper presents a monolithic microwave integrated circuit (MMIC) low noise amplifier
(LNA) that is compatible with n257 (26.5–29.5 GHz) and n258 (24.25–27.5 GHz) frequency …
(LNA) that is compatible with n257 (26.5–29.5 GHz) and n258 (24.25–27.5 GHz) frequency …
A neural network-based hybrid physical model for GaN HEMTs
A neural network (NN)-based hybrid physical model for gallium nitride high-electron-mobility
transistors (GaN HEMTs) is proposed. In this model, the artificial NN (ANN) is used to …
transistors (GaN HEMTs) is proposed. In this model, the artificial NN (ANN) is used to …
Small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: An accurate, fast, and reliable approach
This article reports a comparative study of two artificial neural network structures and
associated variants used to describe and predict the behavior of 2× 200 μm2 GaN high …
associated variants used to describe and predict the behavior of 2× 200 μm2 GaN high …
Reliable hybrid small-signal modeling of GaN HEMTs based on particle-swarm-optimization
AS Hussein, AH Jarndal - IEEE Transactions on Computer …, 2017 - ieeexplore.ieee.org
This paper presents an efficient parameter extraction method applied to GaN high electron
mobility transistors. The procedure only relies on S-parameter measurements at cold bias …
mobility transistors. The procedure only relies on S-parameter measurements at cold bias …
Analysis and modeling of the temperature-dependent nonlinearity of intrinsic capacitances in AlGaN/GaN HEMTs
Modeling the temperature-dependent nonlinearity of intrinsic capacitances in AlGaN/GaN
high electron mobility transistors (HEMTs) improves model accuracy. In this letter, extraction …
high electron mobility transistors (HEMTs) improves model accuracy. In this letter, extraction …
A scalable multiharmonic surface-potential model of AlGaN/GaN HEMTs
Q Wu, Y Xu, Y Chen, Y Wang, W Fu… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
An accurate physical model for GaN high-electron-mobility-transistors (HEMTs) device is
imperative and crucial for circuit design and technology optimization. In this paper, a …
imperative and crucial for circuit design and technology optimization. In this paper, a …
Inductive source degeneration in 40-nm GaN HEMTs for operation above 100 GHz
Source degeneration and neutralization techniques are investigated at millimeter-wave (mm-
Wave) in gallium nitride (GaN) high-electron-mobility transistors (HEMTs). The role of thru …
Wave) in gallium nitride (GaN) high-electron-mobility transistors (HEMTs). The role of thru …
A novel approach for the modeling of the dynamic ON-state resistance of GaN-HEMTs
MCJ Weiser, J Hückelheim… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
A compact model approach to enhance the accuracy and facilitate the parameter extraction
of trapping models is presented. The proposed model replaces the conventional …
of trapping models is presented. The proposed model replaces the conventional …
Empowering GaN HEMT models: The gateway for power amplifier design
The purpose of this invited paper is to give readers a comprehensive and critical overview
on how to extract equivalent‐circuit models for GaN HEMTs, which are the preferred devices …
on how to extract equivalent‐circuit models for GaN HEMTs, which are the preferred devices …