Device-Aware Test for Back-Hopping Defects in STT-MRAMs

S Yuan, M Taouil, M Fieback, H Xun… - … , Automation & Test …, 2023 - ieeexplore.ieee.org
The development of Spin-transfer torque magnetic RAM (STT-MRAM) mass production
requires high-quality dedicated test solutions, for which understanding and modeling of …

Testing STT-MRAMs: Do We Need Magnets in our Automated Test Equipment?

S Yuan, H Xun, W Kim, S Rao… - 2024 IEEE …, 2024 - ieeexplore.ieee.org
The Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is on its way to
commercialization. However, the development of high-quality test solutions for STT-MRAMs …

Spin-NeuroMem: A Low-Power Neuromorphic Associative Memory Design Based on Spintronic Devices

S Fu, T Li, C Zhang, S Ma, J Zhang, L Wu - arXiv preprint arXiv …, 2024 - arxiv.org
Biologically-inspired computing models have made significant progress in recent years, but
the conventional von Neumann architecture is inefficient for the large-scale matrix …

TEMT: A Transient Electronic–Magnetic–Thermal-Coupled Simulation Framework for STT-MTJs

D Liu, Q Chen - IEEE Transactions on Computer-Aided Design …, 2022 - ieeexplore.ieee.org
Being a promising candidate for future nonvolatile memory and neuromorphic computing,
spin-transfer-torque magnetic tunnel junction (STT-MTJ) devices are gaining substantial …

Novel STT/SHE MTJ Compact Model Compatible with NGSPICE

J Rajpoot, R Paul, S Verma - arXiv preprint arXiv:2208.14055, 2022 - arxiv.org
Ensuring high performance, while meeting the power budget is a challenging task as the
world is moving towards next-generation computing. Researchers and designers are in …

Design of STT-MRAM Using Hybrid MTJ/CMOS for Applications beyond CMOS

N Aswathy, NMS Mangai - 2022 International Conference on …, 2022 - ieeexplore.ieee.org
Traditional memory devices are made up of semiconductor materials based on electron
charge. But the development of the computing era demands new emerging memories to …