Dopants and defects are important in semiconductor and magnetic devices. Strategies for
controlling doping and defects have been the focus of semiconductor physics research …

We reveal the microscopic vacancy trapping mechanism for H bubble formation in W based
on first-principles calculations of the energetics of H-vacancy interaction and the kinetics of …

Element doping has become an effective strategy to engineer the magnetic properties of two‐
dimensional (2D) materials and is widely explored in van der Waals layered transition metal …

Chemical reduction in oxides plays a crucial role in engineering the material properties
through structural transformation and electron filling. Controlling the reduction at nanoscale …

When a semiconductor host is doped by a foreign element, it is inevitable that a volume
change will occur in the doped system. This volume change depends on both the size and …

Selective area epitaxy is a promising approach to define nanowire networks for topological
quantum computing. However, it is challenging to concurrently engineer nanowire …

A metal–polymer interface is pertinent to numerous technological applications, especially in
spatial sectors. The focus of this work is to elaborate on the metallization process of the poly …

The accurate absolute surface energies of (0001)/(000 1⁠) surfaces of wurtzite structures
are crucial in determining the thin film growth mode of important energy materials. However …

In this study, un-doped and Mg doped NiO nanoparticles have been synthesized through a
simple sol-gel method. To investigate the effect of Mg-doping on the structure of NiO, the …

Determining accurate absolute surface energies for polar surfaces of semiconductors has
been a great challenge in decades. Here, we propose pseudo-hydrogen passivation to …