Binary metal oxide-based resistive switching memory devices: A status review
Semiconductor memories are essential ingredients of modern electronic devices. Resistive
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …
To the issue of the memristor's hrs and lrs states degradation and data retention time
AV Fadeev, KV Rudenko - Russian Microelectronics, 2021 - Springer
In this review of experimental studies, the retention time and endurance of memristor RRAM
memory elements based on reversible resistive switching in oxide dielectrics are studied …
memory elements based on reversible resistive switching in oxide dielectrics are studied …
Linear conductance update improvement of CMOS-compatible second-order memristors for fast and energy-efficient training of a neural network using a memristor …
Memristors are two-terminal memory devices that can change the conductance state and
store analog values. Thanks to their simple structure, suitability for high-density integration …
store analog values. Thanks to their simple structure, suitability for high-density integration …
Forming-free flexible memristor with multilevel storage for neuromorphic computing by full PVD technique
Flexible resistive random access memory (RRAM) has shown great potential in wearable
electronics. With tunable multilevel resistance states, flexible memristors could be used to …
electronics. With tunable multilevel resistance states, flexible memristors could be used to …
Towards engineering in memristors for emerging memory and neuromorphic computing: A review
Resistive random-access memory (RRAM), also known as memristors, having a very simple
device structure with two terminals, fulfill almost all of the fundamental requirements of …
device structure with two terminals, fulfill almost all of the fundamental requirements of …
Induced Complementary Resistive Switching in Forming-Free TiOx/TiO2/TiOx Memristors
S Srivastava, JP Thomas, X Guan… - ACS Applied Materials & …, 2021 - ACS Publications
The undesirable sneak current path is one of the key challenges in high-density memory
integration for the emerging cross-bar memristor arrays. This work demonstrates a new …
integration for the emerging cross-bar memristor arrays. This work demonstrates a new …
Electrochemically driven dual bipolar resistive switching in lanio 3/smnio 3/nb: Srtio 3 heterostructures fabricated through selective area epitaxy
Y Zhang, M Liu, C Ma, L Lu, CY Han - Journal of Materials Chemistry C, 2022 - pubs.rsc.org
The concentration and distribution of oxygen vacancies in oxide materials not only lead to
emergent phenomena, such as the enormous electrical resistance variation in perovskite …
emergent phenomena, such as the enormous electrical resistance variation in perovskite …
Drift speed adaptive memristor model
Different memristive devices have different characteristic curves; how to describe and
simulate various kinds of memristive devices with a unified model is still a significant work. In …
simulate various kinds of memristive devices with a unified model is still a significant work. In …
Memristors with Initial Low‐Resistive State for Efficient Neuromorphic Systems
Memristive electronic synapses are attractive to construct artificial neural networks (ANNs)
for neuromorphic computing systems, owing to their excellent electronic performance, high …
for neuromorphic computing systems, owing to their excellent electronic performance, high …
Enhancing the synaptic properties of low-power and forming-free HfOx/TaOy/HfOx resistive switching devices
D Sakellaropoulos, P Bousoulas, G Nikas… - Microelectronic …, 2020 - Elsevier
The incorporation of a TaO y layer in a HfO x/TaO y/HfO x resistive switching memory stack
results in low-power (~ nW in pulsing mode) and forming-free operation. With this material …
results in low-power (~ nW in pulsing mode) and forming-free operation. With this material …